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EMZ1DXV6T5G

Onsemi

EMZ1DXV6T5G by Onsemi

The Onsemi EMZ1DXV6T5G is a Small Signal BJT with NPN and PNP configurations. It has 2 elements, 6 terminals, and a max power dissipation of 0.5W. Ideal for amplifier applications, it operates at up to 150°C, with a max collector-emitter voltage of 60V and transition frequency of 180MHz.

Median Price

$0.092

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 183,903 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

183,903

-

$0.092

$0.077

$0.068

DigiKey

USA . 183,903 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.120

183,903

-

-

-

$0.120

Verical

USA . 135,903 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.086

135,903

-

-

-

$0.086

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,208 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

-

10k+ parts

-

1,208

$0.072

-

-

-

Vyrian

USA . 8,954 parts In-Stock

1+ parts

-

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-

1k+ parts

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8,954

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,695 parts In-Stock

1+ parts

$0.068

100+ parts

-

1k+ parts

-

10k+ parts

-

1,695

$0.068

-

-

-

Corohmni

South Africa . 455 parts In-Stock

1+ parts

$0.076

100+ parts

-

1k+ parts

-

10k+ parts

-

455

$0.076

-

-

-

Component Stockers USA

USA . 115,059 parts In-Stock

1+ parts

$0.080

100+ parts

$0.070

1k+ parts

$0.070

10k+ parts

$0.070

115,059

$0.080

$0.070

$0.070

$0.070

AZTECH Wire

Italy . 1,015 parts In-Stock

1+ parts

$15.310

100+ parts

-

1k+ parts

-

10k+ parts

-

1,015

$15.310

-

-

-

Native Components

USA . 310 parts In-Stock

1+ parts

$48.304

100+ parts

-

1k+ parts

-

10k+ parts

$46.372

310

$48.304

-

-

$46.372

Northwest PG Solutions

USA . 1,599 parts In-Stock

1+ parts

$53.134

100+ parts

-

1k+ parts

-

10k+ parts

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1,599

$53.134

-

-

-

Continental Prestige Electronics

USA . 183,903 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.078

10k+ parts

-

183,903

-

-

$0.078

-

Problanco Electronics

Mexico . 7,719 parts In-Stock

1+ parts

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7,719

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

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100+ parts

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4,000

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-

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TANS Electronics

Latvia . 2,861 parts In-Stock

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2,861

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Kulean Microsystems

USA . 1,862 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,862

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-

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SupplyDigital Components

Austria . 998 parts In-Stock

1+ parts

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998

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UHIMA Technologies

Türkiye . 485 parts In-Stock

1+ parts

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100+ parts

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485

-

-

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Overview

Unleash the power of innovation with the EMZ1DXV6T5G by Onsemi. Crafted with precision and expertise, this small signal Bipolar Junction Transistor (BJT) boasts NPN and PNP polarities, providing unparalleled performance in amplifier applications. With a compact rectangular package and flat terminals, it is designed for seamless integration and exceptional reliability. Elevate your electronics projects with the quality and value that only Onsemi can deliver. Unlock new possibilities and amplify your success with the EMZ1DXV6T5G today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective material for packaging, suitable for a wide range of applications.

Polarity or Channel Type: NPN AND PNP

Provides flexibility for various circuit configurations and applications.

Configuration: SEPARATE, 2 ELEMENTS

Allows for independent use of NPN and PNP transistors in circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring reliable performance.

Surface Mount: YES

Enables easy and efficient mounting on circuit boards, saving space.

Package Shape: RECTANGULAR

Compact design for efficient PCB layout and space utilization.

Maximum Power Dissipation (Abs): 0.5 W

Suitable for low-power applications while ensuring safe operating conditions.

Minimum DC Current Gain (hFE): 120

High gain ensures signal amplification with minimal input current.

Maximum Operating Temperature: 150 °C

Capable of operating in high-temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 60 V

Voltage rating suitable for a wide range of applications, providing flexibility.

Transistor Element Material: SILICON

Reliable and widely used material for transistor construction, ensuring stability and performance.

Maximum Collector Current (IC): 0.1 A

Adequate current handling capability for various low-power applications.

Terminal Finish: TIN

Corrosion-resistant finish for reliable electrical connections and long-term performance.

Terminal Position: DUAL

Facilitates easy and secure connections in circuit layouts.

Nominal Transition Frequency (fT): 180 MHz

High frequency capability suitable for applications requiring fast switching and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMZ1DXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

EMZ1DXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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