Loading...

EMZ1DXV6T1G

Onsemi

EMZ1DXV6T1G by Onsemi

The Onsemi EMZ1DXV6T1G is a Small Signal BJT with NPN and PNP types in a plastic/epoxy package. It has 2 elements, 6 terminals, and operates as an amplifier with a max power dissipation of 0.5W. With a min hFE of 120 and max fT of 180MHz, it's suitable for applications requiring high-frequency amplification in compact designs.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 136,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

136,000

-

$0.053

$0.044

$0.039

DigiKey

USA . 136,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.070

136,000

-

-

-

$0.070

Verical

USA . 124,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.049

124,000

-

-

-

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 264 parts In-Stock

1+ parts

$0.041

100+ parts

-

1k+ parts

-

10k+ parts

-

264

$0.041

-

-

-

Vyrian

USA . 6,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,800

-

-

-

-

ComSIT Distribution GmbH

Germany . 613 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

613

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 129,862 parts In-Stock

1+ parts

$0.037

100+ parts

-

1k+ parts

-

10k+ parts

-

129,862

$0.037

-

-

-

Corphita

USA . 1,469 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

10k+ parts

-

1,469

$0.039

-

-

-

Corohmni

South Africa . 407 parts In-Stock

1+ parts

$0.043

100+ parts

-

1k+ parts

-

10k+ parts

-

407

$0.043

-

-

-

AZTECH Wire

Italy . 121 parts In-Stock

1+ parts

$9.490

100+ parts

-

1k+ parts

-

10k+ parts

-

121

$9.490

-

-

-

Native Components

USA . 378 parts In-Stock

1+ parts

$26.603

100+ parts

-

1k+ parts

-

10k+ parts

-

378

$26.603

-

-

-

Northwest PG Solutions

USA . 2,357 parts In-Stock

1+ parts

$29.263

100+ parts

$26.336

1k+ parts

-

10k+ parts

-

2,357

$29.263

$26.336

-

-

Continental Prestige Electronics

USA . 136,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.044

136,000

-

-

-

$0.044

QUARKTWIN TECHNOLOGY LTD

USA . 28,162 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

28,162

-

-

-

-

Kulean Microsystems

USA . 6,751 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,751

-

-

-

-

TANS Electronics

Latvia . 6,539 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,539

-

-

-

-

SupplyDigital Components

Austria . 4,377 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,377

-

-

-

-

Glotronic Ltd.

UK . 3,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,700

-

-

-

-

Authorized Procurement Solutions

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

Problanco Electronics

Mexico . 1,143 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,143

-

-

-

-

UHIMA Technologies

Türkiye . 821 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

821

-

-

-

-

Overview

Enhance your electronic projects with the EMZ1DXV6T1G by Onsemi. Crafted by a trusted manufacturer, this small signal bipolar junction transistor offers exceptional quality and reliability. Ideal for amplifier applications, this transistor boasts NPN and PNP configurations in a convenient rectangular package. With a high DC current gain of 120 and a maximum power dissipation of 0.5W, this transistor delivers superior performance while operating at a maximum temperature of 150 °C. Elevate your designs with the value and benefits that this versatile component brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and protection for the transistor components.

Polarity or Channel Type: NPN AND PNP

Offers flexibility in circuit design as both NPN and PNP types are available.

Configuration: SEPARATE, 2 ELEMENTS

Allows for separate use of the two transistor elements, increasing versatility in circuit applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Facilitates easy surface mounting on circuit boards, saving space and reducing assembly time.

Package Shape: RECTANGULAR

Sleek and compact package design that fits well on modern circuit boards.

Terminal Form: FLAT

Flat terminals make soldering and connection easy and efficient.

No. of Elements: 2

Having 2 elements increases the functionality and application options of the transistor.

No. of Terminals: 6

Provides multiple connection points for versatility in circuit configurations.

Maximum Power Dissipation (Abs): 0.5 W

Can handle relatively high power dissipation, making it suitable for a wide range of applications.

Package Style (Meter): SMALL OUTLINE

Compact and space-saving package style, ideal for modern electronic devices.

Minimum DC Current Gain (hFE): 120

High minimum DC current gain provides good amplification capabilities.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring reliable operation in various environments.

Maximum Collector-Emitter Voltage: 60 V

Can handle relatively high collector-emitter voltages, making it suitable for various voltage levels in circuits.

Transistor Element Material: SILICON

Silicon material provides good performance and reliability in the transistor elements.

Maximum Collector Current (IC): 0.1 A

Can handle moderate collector currents, suitable for many small signal applications.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for enough time during soldering process.

Peak Reflow Temperature °C: 260

Can endure high peak reflow temperatures during soldering without damage.

Nominal Transition Frequency (fT): 180 MHz

High nominal transition frequency allows for fast switching and amplification in high-frequency circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMZ1DXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

EMZ1DXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 4