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EMZ1DXV6T1

Onsemi

EMZ1DXV6T1 by Onsemi

The Onsemi EMZ1DXV6T1 is a Small Signal BJT with NPN and PNP channels, ideal for amplifier applications. It features 2 separate elements in a rectangular package with 6 terminals. With a max power dissipation of 0.5W, hFE of 120, and fT of 180MHz, it operates at up to 150 °C and supports a max collector-emitter voltage of 60V.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 121,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

121,000

-

$0.053

$0.044

$0.039

DigiKey

USA . 121,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.070

121,000

-

-

-

$0.070

Verical

USA . 112,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.049

112,000

-

-

-

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,043 parts In-Stock

1+ parts

$0.041

100+ parts

-

1k+ parts

-

10k+ parts

-

2,043

$0.041

-

-

-

Chip Stock

USA . 76,000 parts In-Stock

1+ parts

-

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76,000

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-

-

-

Vyrian

USA . 11,824 parts In-Stock

1+ parts

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11,824

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,137 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

10k+ parts

-

2,137

$0.039

-

-

-

Component Stockers USA

USA . 170,089 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

1k+ parts

$0.040

10k+ parts

$0.040

170,089

$0.040

$0.040

$0.040

$0.040

Corohmni

South Africa . 76 parts In-Stock

1+ parts

$0.043

100+ parts

-

1k+ parts

-

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-

76

$0.043

-

-

-

Native Components

USA . 728 parts In-Stock

1+ parts

$8.569

100+ parts

-

1k+ parts

-

10k+ parts

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728

$8.569

-

-

-

AZTECH Wire

Italy . 494 parts In-Stock

1+ parts

$8.600

100+ parts

-

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494

$8.600

-

-

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Northwest PG Solutions

USA . 1,538 parts In-Stock

1+ parts

$9.426

100+ parts

$8.484

1k+ parts

-

10k+ parts

-

1,538

$9.426

$8.484

-

-

Continental Prestige Electronics

USA . 121,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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$0.044

121,000

-

-

-

$0.044

QUARKTWIN TECHNOLOGY LTD

USA . 10,827 parts In-Stock

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10,827

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Problanco Electronics

Mexico . 8,380 parts In-Stock

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8,380

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TANS Electronics

Latvia . 7,632 parts In-Stock

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7,632

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Kulean Microsystems

USA . 6,785 parts In-Stock

1+ parts

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6,785

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

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4,000

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SupplyDigital Components

Austria . 1,429 parts In-Stock

1+ parts

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1,429

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UHIMA Technologies

Türkiye . 855 parts In-Stock

1+ parts

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855

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Overview

Looking for a reliable and high-quality solution for your amplifier needs? Look no further than the EMZ1DXV6T1 by Onsemi. With its NPN and PNP configuration, this small signal bipolar junction transistor offers exceptional performance and versatility. Whether you're working on audio equipment, communication devices, or industrial applications, this transistor is sure to deliver. Trust in Onsemi's reputation for excellence and innovation, and experience the value and benefits that the EMZ1DXV6T1 brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for flexibility in circuit design and compatibility with different applications.

Configuration: SEPARATE, 2 ELEMENTS

Separate 2 elements configuration allows for easy integration into circuits and provides more options for customization.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Surface Mount: YES

Surface mount capability makes it easy to incorporate into modern electronics designs and saves space on PCBs.

Maximum Power Dissipation (Abs): 0.5 W

With a high power dissipation rating, this transistor can handle higher power levels without overheating.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures reliable and consistent amplification of signals.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 60 V

With a high collector-emitter voltage rating, this transistor is suitable for a variety of voltage levels in circuits.

Transistor Element Material: SILICON

Silicon material ensures good performance and reliability for the transistor.

Maximum Collector Current (IC): 0.1 A

With a high collector current rating, this transistor can handle higher current loads without overheating.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and resistance to corrosion, ensuring good electrical connections.

Nominal Transition Frequency (fT): 180 MHz

High transition frequency allows for fast switching and amplification of high-frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMZ1DXV6T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

EMZ1DXV6T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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