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NSBC123JDXV6T5

Onsemi

NSBC123JDXV6T5 by Onsemi

NSBC123JDXV6T5 by Onsemi is a NPN BJT with 2 elements, built-in resistor, hFE of 80. It has max VCE of 50V, IC of 0.1A, and Pdiss of 0.5W. Ideal for switching applications due to its small outline package and silicon element material.

Median Price

$0.076

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 183,831 parts In-Stock

1+ parts

-

100+ parts

$0.079

1k+ parts

$0.066

10k+ parts

$0.059

183,831

-

$0.079

$0.066

$0.059

Verical

USA . 104,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.073

104,000

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-

-

$0.073

Distributors (In-Stock)

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Digiode

USA . 1,070 parts In-Stock

1+ parts

$0.062

100+ parts

-

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1,070

$0.062

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Chip Stock

USA . 48,000 parts In-Stock

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48,000

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Vyrian

USA . 7,406 parts In-Stock

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7,406

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Distributors (Availability)

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Corphita

USA . 1,664 parts In-Stock

1+ parts

$0.058

100+ parts

-

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-

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-

1,664

$0.058

-

-

-

Corohmni

South Africa . 425 parts In-Stock

1+ parts

$0.065

100+ parts

-

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425

$0.065

-

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AZTECH Wire

Italy . 794 parts In-Stock

1+ parts

$16.160

100+ parts

-

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794

$16.160

-

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Continental Prestige Electronics

USA . 183,831 parts In-Stock

1+ parts

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100+ parts

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$0.059

10k+ parts

-

183,831

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-

$0.059

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Kulean Microsystems

USA . 7,277 parts In-Stock

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7,277

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Problanco Electronics

Mexico . 3,215 parts In-Stock

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3,215

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SupplyDigital Components

Austria . 1,961 parts In-Stock

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1,961

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TANS Electronics

Latvia . 1,404 parts In-Stock

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1,404

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UHIMA Technologies

Türkiye . 531 parts In-Stock

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531

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Overview

Discover the power of the NSBC123JDXV6T5 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that brings unmatched performance and reliability to your switching applications. With Onsemi's reputation for excellence and innovation, this NPN transistor boasts a compact package body, built-in resistors, and high current gain for seamless operation. Trust in the advanced technology and precision engineering of Onsemi to elevate your projects to new heights. Experience the value and benefits of the NSBC123JDXV6T5 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering reliable performance.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5 W, this transistor can handle power fluctuations effectively without getting damaged.

Minimum DC Current Gain (hFE): 80

A higher DC current gain of 80 indicates better amplification capabilities, ensuring stable and consistent performance.

Maximum Collector-Emitter Voltage: 50 V

The maximum collector-emitter voltage of 50 V allows for safe operation within industry-standard voltage ranges.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC123JDXV6T5 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO 21.36

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC123JDXV6T5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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