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EMC3DXV5T5

Onsemi

EMC3DXV5T5 by Onsemi

EMC3DXV5T5 by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features 2 elements in a cascaded configuration with built-in resistors, ideal for switching applications. With a max collector-emitter voltage of 50V and a power dissipation of 0.5W, it is suitable for surface mount designs requiring compact components.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

8,000

-

$0.053

$0.044

$0.039

DigiKey

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.070

8,000

-

-

-

$0.070

Farnell

UK . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,000

-

-

-

-

Verical

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.049

8,000

-

-

-

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 236 parts In-Stock

1+ parts

$0.043

100+ parts

-

1k+ parts

-

10k+ parts

-

236

$0.043

-

-

-

Chip Stock

USA . 31,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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31,000

-

-

-

-

Vyrian

USA . 11,985 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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-

11,985

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 149 parts In-Stock

1+ parts

$0.040

100+ parts

-

1k+ parts

-

10k+ parts

-

149

$0.040

-

-

-

Corohmni

South Africa . 293 parts In-Stock

1+ parts

$0.045

100+ parts

-

1k+ parts

-

10k+ parts

-

293

$0.045

-

-

-

Native Components

USA . 359 parts In-Stock

1+ parts

$0.728

100+ parts

-

1k+ parts

-

10k+ parts

-

359

$0.728

-

-

-

Northwest PG Solutions

USA . 2,272 parts In-Stock

1+ parts

$0.801

100+ parts

-

1k+ parts

-

10k+ parts

-

2,272

$0.801

-

-

-

AZTECH Wire

Italy . 927 parts In-Stock

1+ parts

$20.570

100+ parts

-

1k+ parts

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10k+ parts

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927

$20.570

-

-

-

Kulean Microsystems

USA . 8,029 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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8,029

-

-

-

-

Continental Prestige Electronics

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.041

8,000

-

-

-

$0.041

SupplyDigital Components

Austria . 7,446 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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7,446

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-

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TANS Electronics

Latvia . 5,477 parts In-Stock

1+ parts

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100+ parts

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5,477

-

-

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Problanco Electronics

Mexico . 1,303 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,303

-

-

-

-

UHIMA Technologies

Türkiye . 907 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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907

-

-

-

-

Overview

Discover the EMC3DXV5T5 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that offers cascaded configuration with built-in resistors for efficient switching applications. With NPN and PNP channels in a small outline package, this transistor provides reliability and performance. From its durable plastic/epoxy body to its maximum collector current of 0.1A, this product delivers value and benefits to customers seeking top-notch components for their electronics projects. Upgrade your designs with the EMC3DXV5T5 and experience the Onsemi advantage today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, ensuring reliable performance in various electronic applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP options allows for versatile use in a wide range of circuit designs and applications.

Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR

The cascaded configuration with built-in resistor simplifies circuit design and saves space on the PCB, making this transistor a convenient choice for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient performance in turning electrical signals on and off.

Surface Mount: YES

Being surface mountable makes the installation of this transistor easy and efficient, especially in compact electronic devices where space is limited.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement on the PCB and efficient use of space, ideal for designs with tight constraints.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power loads, suitable for various small signal applications.

Minimum DC Current Gain (hFE): 35

The high minimum DC current gain of 35 ensures consistent and reliable amplification of signals, making this transistor a dependable choice for signal processing.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage of 50V allows for safe operation in circuits with higher voltages without risking damage to the transistor.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current loads, suitable for a variety of small signal applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMC3DXV5T5 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

EMC3DXV5T5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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