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EMC3DXV5T1

Onsemi

EMC3DXV5T1 by Onsemi

EMC3DXV5T1 by Onsemi is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It features 2 elements in a cascaded configuration with built-in resistors, offering a max collector-emitter voltage of 50V and a min DC current gain of 35 (hFE). This surface-mount transistor has a package style of small outline and can handle up to 0.1A collector current.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 424 parts In-Stock

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Vyrian

USA . 365 parts In-Stock

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365

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Native Components

USA . 821 parts In-Stock

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$6.900

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821

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TANS Electronics

Latvia . 7,121 parts In-Stock

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SupplyDigital Components

Austria . 6,351 parts In-Stock

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Problanco Electronics

Mexico . 4,686 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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Kulean Microsystems

USA . 3,382 parts In-Stock

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Northwest PG Solutions

USA . 882 parts In-Stock

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$6.762

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Corphita

USA . 503 parts In-Stock

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UHIMA Technologies

Türkiye . 426 parts In-Stock

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Corohmni

South Africa . 106 parts In-Stock

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Overview

Looking for a reliable and high-quality Small Signal Bipolar Junction Transistor (BJT) for your switching applications? Look no further than the EMC3DXV5T1 by Onsemi. With a compact package shape and cascadable configuration featuring 2 elements with built-in resistors, this NPN and PNP transistor offers superior performance and efficiency. Whether you're working on consumer electronics, industrial automation, or automotive applications, this transistor provides the power, reliability, and versatility you need to succeed. Choose the EMC3DXV5T1 for your next project and experience the difference that Onsemi quality can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for flexibility and compatibility with a wide range of circuit designs.

Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR

The cascaded configuration with built-in resistor simplifies circuit design and can improve performance in switching applications.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient and reliable operation in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy and efficient integration into modern electronic assemblies.

Package Shape: RECTANGULAR

Rectangular shape provides a compact form factor for space-constrained designs.

Terminal Form: FLAT

Flat terminal form simplifies soldering and ensures a secure connection.

Maximum Power Dissipation (Abs): 0.5 W

High power dissipation capability allows for operation in demanding conditions without overheating.

Minimum DC Current Gain (hFE): 35

Minimum DC current gain of 35 ensures stable and consistent amplification in various circuit configurations.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage rating of 50V ensures reliability in high-voltage circuits.

Maximum Collector Current (IC): 0.1 A

Maximum collector current of 0.1A allows for handling moderate power levels in switching applications.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and solderability for reliable connections.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time of 30 seconds minimizes thermal stress on the component during assembly.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260 °C ensures proper soldering and reliability in assembly processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMC3DXV5T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

EMC3DXV5T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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