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EMD5DXV6T1

Onsemi

EMD5DXV6T1 by Onsemi

EMD5DXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features separate elements with built-in resistor for switching applications. With a max VCEsat of 0.25V, it operates in temperatures ranging from -55 to 150 °C, making it suitable for various electronic devices.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 7,885 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

7,885

-

$0.053

$0.044

$0.039

DigiKey

USA . 7,885 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.070

7,885

-

-

-

$0.070

Verical

USA . 7,885 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.049

7,885

-

-

-

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,336 parts In-Stock

1+ parts

$0.041

100+ parts

-

1k+ parts

-

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1,336

$0.041

-

-

-

Chip Stock

USA . 24,000 parts In-Stock

1+ parts

-

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24,000

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Vyrian

USA . 5,279 parts In-Stock

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5,279

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,670 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

10k+ parts

-

1,670

$0.039

-

-

-

Corohmni

South Africa . 443 parts In-Stock

1+ parts

$0.043

100+ parts

-

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10k+ parts

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443

$0.043

-

-

-

AZTECH Wire

Italy . 1,048 parts In-Stock

1+ parts

$8.700

100+ parts

-

1k+ parts

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-

1,048

$8.700

-

-

-

Native Components

USA . 689 parts In-Stock

1+ parts

$9.630

100+ parts

-

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689

$9.630

-

-

-

Northwest PG Solutions

USA . 609 parts In-Stock

1+ parts

$10.593

100+ parts

$9.534

1k+ parts

-

10k+ parts

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609

$10.593

$9.534

-

-

Problanco Electronics

Mexico . 6,075 parts In-Stock

1+ parts

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6,075

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SupplyDigital Components

Austria . 2,735 parts In-Stock

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2,735

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TANS Electronics

Latvia . 2,395 parts In-Stock

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2,395

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UHIMA Technologies

Türkiye . 561 parts In-Stock

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561

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Kulean Microsystems

USA . 83 parts In-Stock

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83

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Overview

Unleash the power of innovation with the EMD5DXV6T1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality small signal bipolar junction transistors that are perfect for switching applications. With a maximum VCEsat of 0.25V and a minimum DC current gain of 80, this product offers unparalleled performance and reliability. Whether you're a seasoned professional or a DIY enthusiast, the EMD5DXV6T1 will exceed your expectations with its advanced features and cutting-edge technology. Upgrade your projects today and experience the difference with Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a range of applications.

Polarity or Channel Type: NPN AND PNP

Offers flexibility for different circuit designs, allowing for both NPN and PNP configurations.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Saves space and simplifies circuit design by integrating two elements with a built-in resistor.

Transistor Application: SWITCHING

Designed for switching applications, ensuring efficient and reliable performance.

Surface Mount: YES

Enables easy and secure mounting on circuit boards, suitable for automated assembly processes.

Maximum VCEsat: 0.25 V

Low saturation voltage minimizes power loss and improves switching efficiency.

Terminal Form: FLAT

Facilitates easy soldering and connection, ensuring a stable electrical connection.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMD5DXV6T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 2.13

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

EMD5DXV6T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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