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EMD5DXV6T5G

Onsemi

EMD5DXV6T5G by Onsemi

EMD5DXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It features 2 elements with built-in resistors, a max collector-emitter voltage of 50V, and a min DC current gain of 80 (hFE). This transistor has a package style of small outline, surface mount capability, and can handle up to 0.1A collector current.

Median Price

$0.060

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,520,000 parts In-Stock

1+ parts

-

100+ parts

$0.062

1k+ parts

$0.051

10k+ parts

$0.046

1,520,000

-

$0.062

$0.051

$0.046

Farnell

UK . 1,520,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.059

1,520,000

-

-

-

$0.059

Verical

USA . 1,320,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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$0.058

1,320,000

-

-

-

$0.058

DigiKey

USA . 7,985 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.060

7,985

-

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$0.060

Flip Electronics (Authorized)

USA . 7,985 parts In-Stock

1+ parts

-

100+ parts

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7,985

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,633 parts In-Stock

1+ parts

$0.050

100+ parts

-

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1,633

$0.050

-

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Vyrian

USA . 905 parts In-Stock

1+ parts

$0.053

100+ parts

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905

$0.053

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Chip Stock

USA . 26,000 parts In-Stock

1+ parts

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26,000

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Flip Electronics

USA . 7,985 parts In-Stock

1+ parts

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100+ parts

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7,985

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,159 parts In-Stock

1+ parts

$0.048

100+ parts

-

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2,159

$0.048

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Corohmni

South Africa . 58 parts In-Stock

1+ parts

$0.053

100+ parts

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58

$0.053

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Native Components

USA . 824 parts In-Stock

1+ parts

$57.700

100+ parts

-

1k+ parts

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10k+ parts

$55.392

824

$57.700

-

-

$55.392

Northwest PG Solutions

USA . 1,824 parts In-Stock

1+ parts

$63.470

100+ parts

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1,824

$63.470

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Continental Prestige Electronics

USA . 1,520,000 parts In-Stock

1+ parts

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100+ parts

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$0.059

10k+ parts

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1,520,000

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$0.059

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Kepictronics

USA . 800,000 parts In-Stock

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800,000

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SupplyDigital Components

Austria . 6,563 parts In-Stock

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6,563

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Problanco Electronics

Mexico . 6,558 parts In-Stock

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6,558

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TANS Electronics

Latvia . 2,752 parts In-Stock

1+ parts

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2,752

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Kulean Microsystems

USA . 2,094 parts In-Stock

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2,094

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UHIMA Technologies

Türkiye . 799 parts In-Stock

1+ parts

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799

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Overview

Discover the power of innovation with the EMD5DXV6T5G by Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor. Manufactured with precision and expertise, this versatile component is perfect for switching applications. With NPN and PNP configurations, separate elements, and a built-in resistor, this transistor offers unparalleled performance and reliability. Whether you're in the automotive, industrial, or consumer electronics industry, this product provides the value, benefits, and advantages you need to take your projects to the next level. Trust Onsemi for quality and excellence - upgrade your technology today with the EMD5DXV6T5G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective material, suitable for a wide range of applications.

Polarity or Channel Type: NPN AND PNP

Versatile in terms of compatibility with different circuit designs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Provides flexibility and convenience in circuit design while also saving space with built-in resistor.

Transistor Application: SWITCHING

Ideal for applications that require rapid switching between on and off states.

Surface Mount: YES

Suitable for automated assembly processes and allows for compact circuit board design.

Package Shape: RECTANGULAR

Easy to handle and integrate into various circuit layouts.

Terminal Form: FLAT

Provides a stable connection for reliable performance.

Maximum Power Dissipation (Abs): 0.5 W

Can handle moderate power levels, suitable for many applications.

Minimum DC Current Gain (hFE): 80

Ensures proper amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for demanding environments.

Maximum Collector-Emitter Voltage: 50 V

Can handle moderate voltage levels, suitable for a variety of applications.

Transistor Element Material: SILICON

High-quality material for efficient performance and reliability.

Maximum Collector Current (IC): 0.1 A

Can handle moderate current levels, suitable for various circuit requirements.

Terminal Finish: MATTE TIN

Provides a reliable contact surface for efficient signal transfer.

Terminal Position: DUAL

Allows for easy and secure connection in circuit layout.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a short duration during assembly.

Peak Reflow Temperature °C: 260

Suitable for reflow soldering processes, ensuring proper connection during assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMD5DXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 2.13

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

EMD5DXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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