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EMD53T2R

ROHM

EMD53T2R by ROHM

ROHM EMD53T2R is a Small Signal BJT with NPN and PNP types. It features 2 elements with built-in resistor, suitable for switching applications. With a max VCE of 50V and fT of 250MHz, it's ideal for high-speed circuits in compact designs.

Median Price

$0.314

Lifecycle Status

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Mouser Electronics

USA . 5,733 parts In-Stock

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$0.410

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$0.158

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$0.093

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$0.065

5,733

$0.410

$0.158

$0.093

$0.065

DigiKey

USA . 6,121 parts In-Stock

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$0.076

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Verical

USA . 162 parts In-Stock

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$0.505

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$0.505

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Chip1Stop

Japan . 39 parts In-Stock

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$0.218

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39

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$0.218

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ACDS - Activité Composants Distribution Service

France . 5,948 parts In-Stock

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Semtec, LLC

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Nova Conductors

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61

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Ampacity Inc.

Singapore . 4,826 parts In-Stock

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$0.127

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CoreStaff

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$0.129

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$0.057

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$0.050

3,436

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Continental Prestige Electronics

USA . 7,835 parts In-Stock

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$0.302

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$0.130

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$0.067

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$0.050

7,835

$0.302

$0.130

$0.067

$0.050

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USA . 3,000 parts In-Stock

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Overview

Unleash the power of innovation with ROHM's EMD53T2R Small Signal Bipolar Junction Transistor. Designed with precision and quality in mind, this transistor offers seamless switching applications with NPN and PNP configurations. With a compact rectangular package and built-in resistors, this product ensures efficient performance in a variety of electronic circuits. Experience the reliability and value that ROHM products bring to your projects, making every connection seamless and every application a success. Upgrade your designs today with the EMD53T2R and see the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN AND PNP

Offers flexibility in circuit design as both NPN and PNP transistors are included in one package.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Allows for easy implementation in circuits where separate NPN and PNP transistors with built-in resistors are required.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient operation.

Surface Mount: YES

Enables easy and convenient mounting on PCBs for space-saving and efficient circuit design.

Package Shape: RECTANGULAR

Facilitates easy integration into various circuit layouts and designs.

No. of Elements: 2

Provides both NPN and PNP transistors in one package, allowing for versatile use in different circuit configurations.

No. of Terminals: 6

Offers multiple connection points for versatile circuit integration and implementation.

Package Style (Meter): SMALL OUTLINE

Compact size and shape make it suitable for applications where space is limited.

Minimum DC Current Gain (hFE): 35

Ensures consistent and stable transistor performance in various operating conditions.

Maximum Collector-Emitter Voltage: 50 V

Can handle relatively high voltage levels, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon material ensures high performance, reliability, and efficiency in transistor operation.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, suitable for many low to medium power applications.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connection and layout.

Maximum Time At Peak Reflow Temperature (s): 10

Can withstand high peak reflow temperatures for a short duration, ensuring reliable soldering during assembly.

Peak Reflow Temperature °C: 260

Designed to withstand high reflow temperatures during assembly processes.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency enables fast switching speeds and high-frequency operation in various circuit designs.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMD53T2R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-F6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

EMD53T2R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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