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EMD5DXV6T1G

Onsemi

EMD5DXV6T1G by Onsemi

EMD5DXV6T1G by Onsemi is a dual NPN and PNP BJT with 2 elements, 0.5W power dissipation, hFE of 20, and 0.1A collector current. It is made of silicon for surface mount applications with TIN finish. Ideal for low-power amplification in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 37,000 parts In-Stock

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Vyrian

USA . 12,189 parts In-Stock

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Digiode

USA . 823 parts In-Stock

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AZTECH Wire

Italy . 952 parts In-Stock

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$16.580

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952

$16.580

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Component Stockers USA

USA . 421 parts In-Stock

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$99.990

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TANS Electronics

Latvia . 5,755 parts In-Stock

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Kulean Microsystems

USA . 5,138 parts In-Stock

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Problanco Electronics

Mexico . 4,366 parts In-Stock

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SupplyDigital Components

Austria . 4,109 parts In-Stock

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Corphita

USA . 1,543 parts In-Stock

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UHIMA Technologies

Türkiye . 930 parts In-Stock

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Native Components

USA . 701 parts In-Stock

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$4.346

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Corohmni

South Africa . 392 parts In-Stock

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Northwest PG Solutions

USA . 139 parts In-Stock

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$4.390

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Overview

Experience superior performance and reliability with the EMD5DXV6T1G by Onsemi, a leading manufacturer in the industry. Designed for Small Signal Bipolar Junction Transistors (BJT), this product offers both NPN and PNP polarity options, making it versatile for a wide range of applications. With a maximum power dissipation of 0.5W and a minimum DC current gain of 20, customers can trust in the quality and efficiency of this transistor. Whether you need it for amplification, switching, or voltage regulation, the EMD5DXV6T1G delivers exceptional value and benefits, ensuring optimal performance in your electronic projects.

Feature Benefit Bullets

Polarity or Channel Type: NPN AND PNP

This product offers flexibility in circuit design as it supports both NPN and PNP configurations.

Surface Mount: YES

Being surface mountable makes this product suitable for compact and space-constrained electronic devices.

No. of Elements: 2

Having 2 elements provides redundancy and enhances the reliability of the transistor in a circuit.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power levels effectively.

Minimum DC Current Gain (hFE): 20

The minimum DC current gain of 20 ensures consistent amplification performance in various circuit applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this product a durable choice for electronic circuits.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels in a circuit.

Terminal Finish: TIN

Tin terminal finish provides good solderability and ensures secure connections in electronic assemblies.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C allows for reliable soldering during surface mount assembly processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMD5DXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

20

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Transistor Element Material:

SILICON

Trade Compliance

EMD5DXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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