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BC327-40ZL1G

Onsemi

BC327-40ZL1G by Onsemi

BC327-40ZL1G by Onsemi is a PNP BJT transistor with hFE of 250, VCEO of 45V, and IC of 0.8A. Ideal for amplifier applications due to its high transition frequency of 260MHz and max power dissipation of 0.625W in a cylindrical package. Operating temperature ranges from -55 to 150°C making it suitable for various electronic designs.

Median Price

$0.327

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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Arrow

USA . 61 parts In-Stock

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$0.327

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Digiode

USA . 1,120 parts In-Stock

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$0.311

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ComSIT Distribution GmbH

Germany . 117,840 parts In-Stock

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ComSIT USA

USA . 117,840 parts In-Stock

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Chip Stock

USA . 7,630 parts In-Stock

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Vyrian

USA . 6,542 parts In-Stock

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VNN

France . 3,421 parts In-Stock

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Pegasus Components GmbH

Germany . 2,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,700 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 980 parts In-Stock

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Nova Conductors

Japan . 99 parts In-Stock

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Sensible Micro Corp

USA . 61 parts In-Stock

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Ampacity Inc.

Singapore . 61 parts In-Stock

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$0.278

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Corphita

USA . 2,402 parts In-Stock

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$0.294

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Corohmni

South Africa . 106 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,946 parts In-Stock

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$0.905

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AZTECH Wire

Italy . 502 parts In-Stock

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$8.734

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 6,023 parts In-Stock

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Problanco Electronics

Mexico . 4,821 parts In-Stock

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SupplyDigital Components

Austria . 4,147 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Kulean Microsystems

USA . 2,877 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,590 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,060 parts In-Stock

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Continental Prestige Electronics

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UHIMA Technologies

Türkiye . 469 parts In-Stock

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Argo Parts USA

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Overview

Unleash the power of innovation with the BC327-40ZL1G by Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, known for their superior quality and cutting-edge technology, this PNP transistor is a game-changer in the world of amplifiers. Offering a maximum power dissipation of 0.625 W and a minimum DC current gain of 250, this transistor delivers unmatched performance and reliability. Whether you're designing audio equipment, communication devices, or automotive systems, the BC327-40ZL1G is the perfect choice for all your amplification needs. Upgrade your projects today and experience the difference with Onsemi's BC327-40ZL1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits and can handle higher power levels compared to NPN transistors.

Configuration: SINGLE

Simple and easy to use in circuits, offering straightforward functionality.

Transistor Application: AMPLIFIER

Optimized for use in amplifier circuits, ensuring reliable performance in signal amplification.

Package Shape: ROUND

Compact design suitable for space-constrained applications.

No. of Terminals: 3

Basic and standard configuration for connection in circuits.

Maximum Power Dissipation (Abs): 0.625 W

Can handle power dissipation efficiently without overheating, ensuring reliability and longevity.

Minimum DC Current Gain (hFE): 250

Consistent and high DC current gain for predictable and stable amplification performance.

Maximum Operating Temperature: 150 °C

Can operate in a wide range of temperatures, making it suitable for various environmental conditions.

Maximum Collector-Emitter Voltage: 45 V

Allows for handling significant voltage levels in the circuit without risk of damage.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them ideal for a range of applications.

Minimum Operating Temperature: -55 °C

Capable of functioning in extreme cold temperatures, ensuring versatility in usage.

Maximum Collector Current (IC): 0.8 A

Supports high collector current levels, making it suitable for various high-power applications.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance, ensuring reliable connections.

Terminal Position: BOTTOM

Facilitates easy installation and connection in circuit boards.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly processes without damage.

Nominal Transition Frequency (fT): 260 MHz

High transition frequency enables fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC327-40ZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

250

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC327-40ZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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