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MPSW92G

Onsemi

MPSW92G by Onsemi

MPSW92G by Onsemi is a PNP BJT transistor with 1W power dissipation, 300V max collector-emitter voltage, and 50MHz transition frequency. Ideal for switching applications in electronics due to its high current gain and operating temperature up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 43,000 parts In-Stock

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Vyrian

USA . 5,520 parts In-Stock

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Digiode

USA . 1,132 parts In-Stock

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AZTECH Wire

Italy . 164 parts In-Stock

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$12.610

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Component Stockers USA

USA . 579 parts In-Stock

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$99.990

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SupplyDigital Components

Austria . 7,897 parts In-Stock

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Problanco Electronics

Mexico . 7,365 parts In-Stock

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TANS Electronics

Latvia . 4,406 parts In-Stock

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Kulean Microsystems

USA . 2,422 parts In-Stock

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Corphita

USA . 991 parts In-Stock

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UHIMA Technologies

Türkiye . 266 parts In-Stock

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Corohmni

South Africa . 109 parts In-Stock

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Kepictronics

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Overview

Discover the power of the MPSW92G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor designed for switching applications. With a maximum collector-emitter voltage of 300V and a peak reflow temperature of 260 °C, this PNP transistor offers unmatched reliability and performance. Ideal for a wide range of electronic projects, the MPSW92G is a versatile component that delivers superior functionality and value. Upgrade your designs today with the trusted manufacturer Onsemi and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good electrical insulation and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration with PNP systems, enhancing compatibility and functionality.

Configuration: SINGLE

Simplified design and usage, making it easier to implement in circuits.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient and reliable performance.

Package Shape: ROUND

Compact design and space-saving form factor for easy integration in various setups.

Maximum Power Dissipation (Abs): 1 W

Can handle moderate power levels without overheating, ensuring durability and longevity.

Minimum DC Current Gain (hFE): 25

Ensures consistent and reliable amplification of current in the transistor.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for demanding environments.

Maximum Collector-Emitter Voltage: 300 V

Can handle high voltage levels, making it versatile for a wide range of applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability compared to other materials.

Maximum Collector Current (IC): 0.5 A

Able to handle moderate current levels, suitable for various electronic circuits and applications.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance for reliable connections.

Nominal Transition Frequency (fT): 50 MHz

High frequency response for fast switching and signal processing, suitable for advanced electronic applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW92G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-226

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW92G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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