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BC859CLT1G

Onsemi

BC859CLT1G by Onsemi

BC859CLT1G by Onsemi is a PNP BJT with 3 terminals, hFE of 420, and max operating temp of 150 °C. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency of 100 MHz, and collector-emitter voltage of 30V.

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 73,000 parts In-Stock

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Vyrian

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Digiode

USA . 1,764 parts In-Stock

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AZTECH Wire

Italy . 796 parts In-Stock

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Perfect Parts

USA . 14,689 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,537 parts In-Stock

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TANS Electronics

Latvia . 4,645 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,691 parts In-Stock

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SupplyDigital Components

Austria . 3,405 parts In-Stock

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Problanco Electronics

Mexico . 3,224 parts In-Stock

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Assy Fe

Spain . 3,000 parts In-Stock

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Kepictronics

USA . 2,900 parts In-Stock

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Northwest PG Solutions

USA . 1,161 parts In-Stock

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UHIMA Technologies

Türkiye . 790 parts In-Stock

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Kulean Microsystems

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South Africa . 423 parts In-Stock

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Overview

Discover the BC859CLT1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that offers unmatched performance and reliability. Manufactured by industry leader Onsemi, this PNP transistor is perfect for a wide range of applications. With its compact size and high DC current gain, this transistor is ideal for amplification and switching circuits. Trust Onsemi to deliver cutting-edge technology and superior products that meet your needs. Experience the value and benefits of the BC859CLT1G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes this transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits where PNP transistors are required, enhancing compatibility and flexibility.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making this transistor easy to incorporate into different electronic systems.

Surface Mount: YES

Being surface mountable makes installation and soldering convenient, ensuring a secure and compact connection in tight spaces.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3W, this transistor can handle moderate power levels effectively, suitable for various low to medium power applications.

Maximum Collector-Emitter Voltage: 30 V

The 30V maximum collector-emitter voltage rating provides a safe operating range, allowing for reliable performance in various voltage conditions.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency of 100MHz indicates fast response and switching times, making this transistor ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC859CLT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

420

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC859CLT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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