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2N5401G

Onsemi

2N5401G by Onsemi

The Onsemi 2N5401G is a PNP BJT transistor with max. collector-emitter voltage of 150V, max. collector current of 0.6A, and min. DC current gain of 50. It is commonly used in amplifier applications due to its high transition frequency of 100MHz and max. power dissipation of 0.63W for efficient signal amplification.

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Chip Stock

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LWI Electronics Inc

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Digiode

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ComSIT Distribution GmbH

Germany . 448 parts In-Stock

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Inventory MP

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Bristol Electronics

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EMSNET

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Native Components

USA . 244 parts In-Stock

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Northwest PG Solutions

USA . 601 parts In-Stock

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AZTECH Wire

Italy . 425 parts In-Stock

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$9.030

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Component Stockers USA

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kulean Microsystems

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Glotronic Ltd.

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TANS Electronics

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Overview

Elevate your electronic designs with the 2N5401G by Onsemi. As a leading manufacturer of Small Signal Bipolar Junction Transistors, Onsemi delivers top-notch quality and reliability. The 2N5401G is a PNP transistor perfect for amplifier applications, offering a minimum DC current gain of 50 and a maximum collector-emitter voltage of 150V. With a maximum power dissipation of 0.63W, this transistor ensures optimal performance in a variety of projects. Trust Onsemi to provide cutting-edge technology that empowers your creations to reach their full potential.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy packaging makes the transistor lightweight and durable, ensuring reliable performance in various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in amplifier circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplification circuits.

Package Shape: ROUND

Round package shape allows for easy installation and mounting, making it suitable for various PCB layouts and designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections in PCBs, ensuring stable operation in amplifier circuits.

Maximum Power Dissipation (Abs): 0.63 W

High power dissipation capacity allows the transistor to handle relatively high power levels, making it suitable for amplifier applications.

Maximum Operating Temperature: 150 °C

High operating temperature limit ensures stability and reliability in various operating conditions, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 150 V

High collector-emitter voltage rating allows the transistor to handle high voltages, making it suitable for amplifier circuits.

Maximum Collector Current (IC): 0.6 A

High collector current rating allows the transistor to handle relatively high currents, making it suitable for amplifier applications.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows the transistor to operate at high frequencies, making it suitable for amplifier circuits requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N5401G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5401G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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