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MPSA06RL1G

Onsemi

MPSA06RL1G by Onsemi

MPSA06RL1G by Onsemi is a NPN small signal bipolar junction transistor (BJT) with a max power dissipation of 0.625W and a min DC current gain of 100. It is commonly used as an amplifier in various applications.

Median Price

$0.102

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 225,238 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.096

225,238

-

-

-

$0.096

Rochester

USA . 208,084 parts In-Stock

1+ parts

-

100+ parts

$0.106

1k+ parts

$0.088

10k+ parts

$0.078

208,084

-

$0.106

$0.088

$0.078

DigiKey

USA . 208,084 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.130

208,084

-

-

-

$0.130

Verical

USA . 200,084 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.098

200,084

-

-

-

$0.098

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.066

100+ parts

-

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50

$0.066

-

-

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Digiode

USA . 1,722 parts In-Stock

1+ parts

$0.083

100+ parts

-

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1,722

$0.083

-

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-

Chip Stock

USA . 55,000 parts In-Stock

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55,000

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Vyrian

USA . 10,398 parts In-Stock

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10,398

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ACDS - Activité Composants Distribution Service

France . 2,000 parts In-Stock

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2,000

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Speed Components Ltd

Israel . 1,896 parts In-Stock

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1,896

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 492 parts In-Stock

1+ parts

$0.065

100+ parts

-

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492

$0.065

-

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Argo Parts USA

USA . 1,030 parts In-Stock

1+ parts

$0.066

100+ parts

-

1k+ parts

-

10k+ parts

$0.064

1,030

$0.066

-

-

$0.064

Ampacity Inc.

Singapore . 211,427 parts In-Stock

1+ parts

$0.074

100+ parts

-

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211,427

$0.074

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Corphita

USA . 1,430 parts In-Stock

1+ parts

$0.078

100+ parts

-

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1,430

$0.078

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Component Stockers USA

USA . 228,343 parts In-Stock

1+ parts

$0.090

100+ parts

$0.080

1k+ parts

$0.070

10k+ parts

$0.070

228,343

$0.090

$0.080

$0.070

$0.070

AZTECH Wire

Italy . 847 parts In-Stock

1+ parts

$15.060

100+ parts

-

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847

$15.060

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Continental Prestige Electronics

USA . 225,238 parts In-Stock

1+ parts

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100+ parts

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$0.078

10k+ parts

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225,238

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-

$0.078

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Perfect Parts

USA . 72,585 parts In-Stock

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72,585

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QUARKTWIN TECHNOLOGY LTD

USA . 12,348 parts In-Stock

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12,348

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TANS Electronics

Latvia . 7,575 parts In-Stock

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7,575

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Kulean Microsystems

USA . 7,158 parts In-Stock

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7,158

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SupplyDigital Components

Austria . 3,731 parts In-Stock

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3,731

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Problanco Electronics

Mexico . 3,456 parts In-Stock

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3,456

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Cyclops Electronics Ltd (Excess)

UK . 2,000 parts In-Stock

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2,000

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Glotronic Ltd.

UK . 1,600 parts In-Stock

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1,600

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UHIMA Technologies

Türkiye . 82 parts In-Stock

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82

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Overview

Discover the power of the MPSA06RL1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) that will revolutionize your amplifier applications. With its NPN polarity and single configuration, this transistor offers unrivaled performance and reliability. Manufactured by Onsemi, a trusted industry leader, you can expect nothing but the best in terms of quality and innovation. The MPSA06RL1G boasts a maximum collector-emitter voltage of 80V and a maximum power dissipation of 0.625W, ensuring optimal functionality even in demanding conditions. Upgrade your amplifiers today with the MPSA06RL1G and experience the value, benefits, and advantages it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body ensures durability and resistance to physical damage, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for current amplification and is commonly used in signal amplification circuits, making this product suitable for amplifiers.

Configuration: SINGLE

The single configuration simplifies circuit design and allows for easier integration, making this transistor an ideal choice for small signal applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, this transistor provides excellent amplification capabilities, making it a suitable choice for various amplifier circuits.

Package Shape: ROUND

The round package shape offers ease of handling and installation, making it a convenient choice for assembly and integration into electronic systems.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a strong and reliable electrical connection, ensuring secure mounting and stability, thus making this transistor a reliable choice for long-term operation.

No. of Elements: 1

With only one element, this transistor simplifies circuit design and reduces complexity, making it an efficient choice for small signal applications.

No. of Terminals: 3

The three terminals allow for easy connectivity and integration into circuits, providing flexibility in circuit design and application versatility.

Maximum Power Dissipation (Abs): 0.625 W

With a high maximum power dissipation capability, this transistor can handle significant power levels while maintaining reliability, making it suitable for applications that require high power handling.

Package Style (Meter): CYLINDRICAL

The use of a cylindrical package style ensures compact size and ease of installation, making it an excellent choice for space-constrained applications.

Minimum DC Current Gain (hFE): 100

With a minimum DC current gain of 100, this transistor provides efficient current amplification, ensuring accurate signal amplification and reliable performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand elevated temperatures, making it suitable for applications in harsh environments or high-temperature conditions.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating of 80 volts allows for safe operation and protection against voltage spikes, making this transistor suitable for various voltage-sensitive applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material offers excellent performance characteristics, including low noise, high gain, and temperature stability, making it an ideal choice for small signal amplifier applications.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current rating of 0.5 amps, this transistor can handle moderate current levels, making it suitable for various low-power applications.

Terminal Finish: TIN SILVER COPPER

The tin silver copper terminal finish provides excellent conductivity and corrosion resistance, ensuring reliable and long-lasting electrical connections, making this transistor a durable choice for extended use.

Terminal Position: BOTTOM

The bottom terminal position allows for easy and efficient mounting on circuit boards, ensuring secure connections and simplifying assembly, thus making this transistor convenient for manufacturing processes.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes, ensuring reliable and robust solder joints during assembly.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency of 100 MHz indicates fast switching capabilities and high-frequency response, making this transistor suitable for applications that require quick signal switching and amplification in the MHz range.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA06RL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA06RL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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