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MPSA42G

Onsemi

MPSA42G by Onsemi

MPSA42G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 300V, ideal for amplifier applications. It has a min. DC current gain of 40 and max. power dissipation of 0.625W in a cylindrical package style. With terminal finish of Tin Silver Copper, it operates up to 150°C with nominal transition frequency of 50MHz.

Median Price

$0.092

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 700 parts In-Stock

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$0.092

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Chip Stock

USA . 43,500 parts In-Stock

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Vyrian

USA . 4,847 parts In-Stock

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Digiode

USA . 1,921 parts In-Stock

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Extreme Components

USA . 600 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 365 parts In-Stock

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Holdelec - ElecDif-Pro

France . 365 parts In-Stock

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Sea View Technologies

USA . 335 parts In-Stock

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Bristol Electronics

USA . 335 parts In-Stock

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A2Z Electronics, Inc.

USA . 17 parts In-Stock

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Distributors (Availability)

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Argo Parts USA

USA . 2,957 parts In-Stock

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$0.050

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$0.049

2,957

$0.050

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$0.049

Continental Prestige Electronics

USA . 2,650 parts In-Stock

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$0.050

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$0.049

2,650

$0.050

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$0.049

Corohmni

South Africa . 51 parts In-Stock

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$0.090

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51

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Netroflash

USA . 2,000 parts In-Stock

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$0.092

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$0.087

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$0.086

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$0.092

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$0.087

$0.086

Aztec Data Supply Inc.

USA . 2,515 parts In-Stock

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$1.038

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$1.038

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Semicontronic

India . 1,153 parts In-Stock

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$5.050

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$4.924

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$4.898

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AZTECH Wire

Italy . 827 parts In-Stock

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$11.844

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Ampacity Inc.

Singapore . 1,466 parts In-Stock

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$56.050

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Perfect Parts

USA . 34,396 parts In-Stock

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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Kulean Microsystems

USA . 5,965 parts In-Stock

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SupplyDigital Components

Austria . 5,612 parts In-Stock

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Infinite Electronics LLP (Excess)

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Futuretech Components

Singapore . 5,000 parts In-Stock

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TANS Electronics

Latvia . 4,934 parts In-Stock

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Problanco Electronics

Mexico . 4,182 parts In-Stock

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Metaverse IC Inc.

Canada . 1,330 parts In-Stock

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Corphita

USA . 768 parts In-Stock

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UHIMA Technologies

Türkiye . 138 parts In-Stock

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ChipstoGo Electronic ltd

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Assy Fe

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Overview

Discover the exceptional quality and reliability of the MPSA42G by Onsemi, a leading manufacturer in the industry. This Small Signal Bipolar Junction Transistor (BJT) is perfect for amplifier applications, offering superior performance and efficiency. With its NPN polarity, high DC current gain, and maximum collector-emitter voltage of 300V, this transistor delivers outstanding results. Trust in Onsemi's expertise and innovation to enhance your projects with the MPSA42G. Unlock new possibilities and achieve optimal performance with this top-notch product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the transistor lightweight and durable, suitable for applications where weight and space are a concern.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this transistor suitable for such applications.

Configuration: SINGLE

Single transistor configuration simplifies circuit design and integration, making it easier to use in various projects.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in audio and signal amplification circuits.

Package Shape: ROUND

Round package shape allows for easy mounting and uniform distribution of heat, enhancing thermal performance.

No. of Terminals: 3

Three terminals provide flexibility in circuit connections and allow for versatile usage in different configurations.

Maximum Power Dissipation (Abs): 0.625 W

High power dissipation capability ensures the transistor can handle relatively high power levels without overheating or damage.

Maximum Collector-Emitter Voltage: 300 V

With a high maximum voltage rating, this transistor is suitable for applications where high voltage levels are present.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency allows for high-speed switching and operation, making it ideal for applications requiring fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA42G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA42G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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