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UMC2NT1G

Onsemi

UMC2NT1G by Onsemi

UMC2NT1G by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features a max VCEsat of 0.25V, common base configuration, and built-in resistor elements. Ideal for switching applications, this transistor has a max collector-emitter voltage of 50V and operates b/w -65 to 150 °C temperatures.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

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Vyrian

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Digiode

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AZTECH Wire

Italy . 502 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 10,446 parts In-Stock

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TANS Electronics

Latvia . 7,306 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,196 parts In-Stock

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Kepictronics

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SupplyDigital Components

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Kulean Microsystems

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Problanco Electronics

Mexico . 704 parts In-Stock

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UHIMA Technologies

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Overview

Unlock the power of reliable performance with the UMC2NT1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Bipolar Junction Transistors (BJT) like never before. Ideal for switching applications, this transistor boasts a common base configuration and 2 elements with built-in resistors, providing customers with seamless operation and enhanced efficiency. With a maximum VCEsat of 0.25V and a minimum DC Current Gain (hFE) of 60, this product guarantees superior performance. Trust Onsemi to deliver excellence in every package, offering unrivaled value and benefits to meet all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy encapsulation provides good protection against environmental factors, making the transistor durable and reliable for various applications.

Polarity or Channel Type: NPN AND PNP

The availability of both NPN and PNP types allows for versatility in circuit design and compatibility with different applications.

Configuration: COMMON BASE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The common base configuration with built-in resistor simplifies circuit design and improves overall transistor performance.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and efficient performance in various electronic circuits.

Surface Mount: YES

Being surface mountable, this transistor is easy to integrate onto PCBs, saving space and simplifying assembly processes.

Maximum VCEsat: 0.25 V

The low VCEsat value ensures minimal voltage drop across the collector-emitter junction, leading to efficient power utilization and reduced heat generation.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy integration in standard PCB layouts and ensures efficient use of board space.

Terminal Form: GULL WING

The gull wing terminal form facilitates efficient soldering and ensures reliable electrical connections, contributing to ease of assembly.

No. of Elements: 2

With two elements, this transistor can handle multiple functions within a circuit, offering increased functionality and versatility.

No. of Terminals: 5

The five terminals provide multiple connection points, allowing for flexible circuit design and enhanced electrical connections.

Maximum Power Dissipation (Abs): 0.15 W

The low power dissipation rating ensures efficient operation and helps prevent thermal issues, making the transistor suitable for a wide range of applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves board space and allows for dense PCB layouts, ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 60

The minimum DC current gain ensures reliable amplification and signal processing, making this transistor suitable for a variety of signal processing applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand harsh environmental conditions and maintain stable performance in extreme temperatures.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating provides ample headroom for voltage spikes and ensures reliable operation in high voltage applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance, reliability, and durability, making it a preferred choice for various electronic applications.

Minimum Operating Temperature: -65 °C

With a low minimum operating temperature, this transistor can operate in extremely cold environments without compromising performance or reliability.

Maximum Collector Current (IC): 0.1 A

The maximum collector current rating of 0.1 A allows the transistor to handle moderate current loads, making it suitable for a wide range of applications.

Terminal Finish: Tin (Sn)

The tin terminal finish ensures reliable solder joints, prevents oxidation, and enhances electrical conductivity, prolonging the lifespan of the transistor.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit design and allows for convenient connection to external components, enabling versatile application possibilities.

Maximum Time At Peak Reflow Temperature (s): 40

The maximum time at peak reflow temperature of 40 seconds ensures proper soldering and prevents thermal damage during assembly processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260 °C allows for reliable and efficient reflow soldering, ensuring strong electrical connections and robust performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) UMC2NT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

UMC2NT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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