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UMC2NT1

Onsemi

UMC2NT1 by Onsemi

UMC2NT1 by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features cascaded configuration, 2 elements with built-in resistor, for switching applications. With a max collector-emitter voltage of 50V and max collector current of 0.1A, it's ideal for surface mount designs in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,830 parts In-Stock

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Digiode

USA . 1,769 parts In-Stock

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1,769

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Component Stockers USA

USA . 325 parts In-Stock

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$99.990

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325

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 18,704 parts In-Stock

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Problanco Electronics

Mexico . 4,344 parts In-Stock

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Kulean Microsystems

USA . 4,229 parts In-Stock

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4,229

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SupplyDigital Components

Austria . 4,163 parts In-Stock

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Corphita

USA . 1,321 parts In-Stock

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UHIMA Technologies

Türkiye . 569 parts In-Stock

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569

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TANS Electronics

Latvia . 260 parts In-Stock

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Corohmni

South Africa . 179 parts In-Stock

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Overview

Experience the power and precision of the UMC2NT1 by Onsemi, a top-tier manufacturer in small signal bipolar junction transistors. This cascadable transistor boasts NPN and PNP configurations, making it ideal for switching applications. With its compact design and high-quality materials, the UMC2NT1 offers reliability and efficiency like no other. Trust Onsemi to deliver innovation and performance in every element, providing you with the value and benefits you need to succeed in your projects. Elevate your circuits with the UMC2NT1 and see the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy packaging makes the transistor lightweight and durable, ideal for portable electronic devices.

Polarity or Channel Type: NPN AND PNP

Being available in both NPN and PNP types, this transistor can be used in a wide range of circuit designs.

Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR

The cascaded configuration with 2 elements and a built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed for switching applications, this transistor provides fast switching speeds and high efficiency.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly on PCBs, saving time and costs during production.

Package Shape: RECTANGULAR

Rectangular shape provides compatibility with standard PCB layouts and facilitates easy integration into various electronic systems.

Maximum Power Dissipation (Abs): 0.15 W

With a high power dissipation rating of 0.15 W, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 60

Minimum DC current gain of 60 ensures consistent and stable amplification in the transistor's operating range.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage rating of 50 V provides a wide operating voltage range for versatility in different applications.

Maximum Collector Current (IC): 0.1 A

A maximum collector current of 0.1 A allows the transistor to handle moderate current levels, suitable for various load requirements.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish ensures good solderability and reliable electrical connections during assembly.

Peak Reflow Temperature °C: 235

High peak reflow temperature tolerance of 235 °C enables robust soldering processes, ensuring dependable performance in harsh environments.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) UMC2NT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

UMC2NT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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