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BC639RL1G

Onsemi

BC639RL1G by Onsemi

BC639RL1G by Onsemi is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 1A. It has a min DC current gain of 40 and can operate at temperatures up to 150°C. This transistor is commonly used in various electronic applications requiring low power dissipation and high frequency performance.

Median Price

$0.061

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 650 parts In-Stock

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Chip Stock

USA . 35,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 8,000 parts In-Stock

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Holdelec - ElecDif-Pro

France . 8,000 parts In-Stock

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Vyrian

USA . 5,596 parts In-Stock

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VNN

France . 1,420 parts In-Stock

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ComSIT Distribution GmbH

Germany . 823 parts In-Stock

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Digiode

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Argo Parts USA

USA . 3,476 parts In-Stock

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$0.061

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$0.059

3,476

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Continental Prestige Electronics

USA . 981 parts In-Stock

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$0.061

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$0.060

981

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Netroflash

USA . 100 parts In-Stock

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$0.061

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AZTECH Wire

Italy . 866 parts In-Stock

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$13.240

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Ampacity Inc.

Singapore . 1,367 parts In-Stock

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$34.050

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Component Stockers USA

USA . 321 parts In-Stock

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$99.990

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Perfect Parts

USA . 31,444 parts In-Stock

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TANS Electronics

Latvia . 7,546 parts In-Stock

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Kulean Microsystems

USA . 6,435 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,241 parts In-Stock

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CPlus Electronics

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Problanco Electronics

Mexico . 3,643 parts In-Stock

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SupplyDigital Components

Austria . 3,458 parts In-Stock

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Corphita

USA . 878 parts In-Stock

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UHIMA Technologies

Türkiye . 511 parts In-Stock

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Corohmni

South Africa . 303 parts In-Stock

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Overview

Discover the BC639RL1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional value and benefits. Manufactured by Onsemi, a trusted industry leader, this NPN transistor provides reliable performance and durability. With a maximum collector-emitter voltage of 80V and a maximum collector current of 1A, it is suitable for a wide range of applications. From amplifiers to switching circuits, this transistor delivers outstanding performance. Experience the advantages of the BC639RL1G, including its robust construction, easy installation with through-hole terminals, and excellent thermal dissipation. Choose Onsemi for a dependable solution that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes this product lightweight and durable, perfect for various applications where weight and durability are key factors.

Polarity or Channel Type: NPN

This NPN configuration ensures that the transistor operates in the normal mode, making it suitable for amplification and switching applications.

Configuration: SINGLE

With a single configuration, this transistor simplifies circuit design and allows for easy integration into electronic circuits.

Package Shape: ROUND

The round package shape offers compatibility with circular mounting patterns, making it convenient to mount the transistor securely.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides stability and durability when soldering the transistor onto a PCB.

No. of Elements: 1

Having one element simplifies the transistor's circuitry and promotes ease of use.

No. of Terminals: 3

The three terminals allow for the connection of the transistor to other components in the circuit, enabling versatile circuit design possibilities.

Maximum Power Dissipation (Abs): 0.625 W

This high power dissipation capability ensures that the transistor can handle applications that require significant power output, making it a reliable choice for demanding circuits.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers efficient heat dissipation and facilitates easy installation, promoting optimal performance and reliability.

Minimum DC Current Gain (hFE): 40

The minimum DC current gain of 40 ensures efficient current amplification, making this transistor suitable for various signal amplification tasks.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments, ensuring its reliability in demanding applications.

Maximum Collector-Emitter Voltage: 80 V

The maximum collector-emitter voltage of 80 V allows for the handling of higher voltage signals, expanding the range of potential applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides excellent performance in terms of speed, power handling, and temperature characteristics.

Maximum Collector Current (IC): 1 A

The 1 A maximum collector current rating allows the transistor to handle high current loads, making it suitable for power switching applications.

Terminal Finish: TIN SILVER COPPER

The tin silver copper terminal finish offers excellent conductivity, corrosion resistance, and solderability, ensuring reliable connections in various environments.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy and secure PCB mounting, simplifying the integration of the transistor into electronic circuits.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 C ensures compatibility with common soldering processes, allowing for easy and reliable assembly.

Nominal Transition Frequency (fT): 200 MHz

The high nominal transition frequency of 200 MHz makes this transistor capable of efficiently amplifying high-frequency signals, making it suitable for applications such as radio frequency amplification and high-speed switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC639RL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-226

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC639RL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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