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BC63916-D27Z

Onsemi

BC63916-D27Z by Onsemi

BC63916-D27Z by Onsemi is a NPN BJT transistor with 1W power dissipation, 80V max collector-emitter voltage, and 100MHz transition frequency. Ideal for switching applications due to its single configuration and 1A max collector current capacity in a cylindrical package.

Median Price

$0.204

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$0.200

100+ parts

$0.190

1k+ parts

$0.190

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100

$0.200

$0.190

$0.190

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Arrow

USA . 2,144 parts In-Stock

1+ parts

$0.207

100+ parts

$0.114

1k+ parts

$0.101

10k+ parts

-

2,144

$0.207

$0.114

$0.101

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Newark

USA . 16,000 parts In-Stock

1+ parts

$0.597

100+ parts

$0.235

1k+ parts

$0.177

10k+ parts

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16,000

$0.597

$0.235

$0.177

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Mouser Electronics

USA . 3,592 parts In-Stock

1+ parts

$0.610

100+ parts

$0.241

1k+ parts

$0.182

10k+ parts

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3,592

$0.610

$0.241

$0.182

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Distrelec

Netherlands . 1,349 parts In-Stock

1+ parts

$0.757

100+ parts

$0.606

1k+ parts

$0.487

10k+ parts

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1,349

$0.757

$0.606

$0.487

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Flip Electronics (Authorized)

USA . 19,841 parts In-Stock

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19,841

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Element14

Singapore . 12,872 parts In-Stock

1+ parts

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$0.291

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$0.286

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12,872

-

$0.291

$0.286

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Farnell

UK . 12,627 parts In-Stock

1+ parts

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100+ parts

$0.162

1k+ parts

$0.159

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12,627

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$0.162

$0.159

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Verical

USA . 4,000 parts In-Stock

1+ parts

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$0.210

4,000

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$0.210

Master Electronics

USA . 4,000 parts In-Stock

1+ parts

-

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$0.177

4,000

-

-

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$0.177

DigiKey

USA . 2,433 parts In-Stock

1+ parts

-

100+ parts

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$0.125

2,433

-

-

-

$0.125

Rochester

USA . 863 parts In-Stock

1+ parts

-

100+ parts

$0.126

1k+ parts

$0.105

10k+ parts

$0.093

863

-

$0.126

$0.105

$0.093

Chip1Stop

Japan . 409 parts In-Stock

1+ parts

-

100+ parts

$0.157

1k+ parts

$0.119

10k+ parts

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409

-

$0.157

$0.119

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 12,000 parts In-Stock

1+ parts

$0.057

100+ parts

-

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12,000

$0.057

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-

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Digiode

USA . 1,816 parts In-Stock

1+ parts

$0.081

100+ parts

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1,816

$0.081

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Nova Conductors

Japan . 168 parts In-Stock

1+ parts

$0.264

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168

$0.264

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TME

Poland . 3,271 parts In-Stock

1+ parts

$0.570

100+ parts

$0.232

1k+ parts

$0.149

10k+ parts

$0.143

3,271

$0.570

$0.232

$0.149

$0.143

Ozdisan Elektronik

Türkiye . 3,565 parts In-Stock

1+ parts

$63.851

100+ parts

-

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3,565

$63.851

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Cyclops Electronics Ltd

UK . 10,000 parts In-Stock

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Chip Stock

USA . 9,500 parts In-Stock

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9,500

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Vyrian

USA . 7,800 parts In-Stock

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7,800

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VNN

France . 6,106 parts In-Stock

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6,106

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NAC Semi

USA . 4,000 parts In-Stock

1+ parts

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$0.157

4,000

-

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$0.157

IBS Electronics

USA . 4,000 parts In-Stock

1+ parts

-

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$0.250

4,000

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$0.250

Anansix

USA . 1,824 parts In-Stock

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1,824

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,675 parts In-Stock

1+ parts

$0.076

100+ parts

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1,675

$0.076

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Ampacity Inc.

Singapore . 24,126 parts In-Stock

1+ parts

$0.080

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24,126

$0.080

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Semicontronic

India . 15,133 parts In-Stock

1+ parts

$0.081

100+ parts

$0.079

1k+ parts

$0.079

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15,133

$0.081

$0.079

$0.079

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Corohmni

South Africa . 196 parts In-Stock

1+ parts

$0.085

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196

$0.085

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Continental Prestige Electronics

USA . 25,012 parts In-Stock

1+ parts

$0.259

100+ parts

-

1k+ parts

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10k+ parts

$0.254

25,012

$0.259

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-

$0.254

Argo Parts USA

USA . 5,062 parts In-Stock

1+ parts

$0.259

100+ parts

-

1k+ parts

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10k+ parts

$0.251

5,062

$0.259

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-

$0.251

Netroflash

USA . 3,500 parts In-Stock

1+ parts

$0.264

100+ parts

-

1k+ parts

$0.251

10k+ parts

$0.246

3,500

$0.264

-

$0.251

$0.246

Perfect Parts

USA . 38,080 parts In-Stock

1+ parts

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38,080

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QUARKTWIN TECHNOLOGY LTD

USA . 26,853 parts In-Stock

1+ parts

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26,853

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ChipstoGo Electronic ltd

UK . 10,000 parts In-Stock

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10,000

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Lixinc

USA . 9,520 parts In-Stock

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9,520

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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Kepictronics

USA . 8,000 parts In-Stock

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8,000

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Glotronic Ltd.

UK . 8,000 parts In-Stock

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8,000

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TANS Electronics

Latvia . 7,300 parts In-Stock

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7,300

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Problanco Electronics

Mexico . 6,609 parts In-Stock

1+ parts

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6,609

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GreenTree Electronics

Israel . 4,000 parts In-Stock

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4,000

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SupplyDigital Components

Austria . 2,846 parts In-Stock

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2,846

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Supply Digital

USA . 1,245 parts In-Stock

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1,245

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UHIMA Technologies

Türkiye . 640 parts In-Stock

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640

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Kulean Microsystems

USA . 176 parts In-Stock

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176

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Overview

Experience superior performance and reliability with the BC63916-D27Z from Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and innovation in every product. The BC63916-D27Z belongs to the Small Signal Bipolar Junction Transistors category, making it ideal for switching applications. With a maximum power dissipation of 1W and a maximum collector-emitter voltage of 80V, this NPN transistor offers unparalleled value and efficiency. Trust Onsemi to deliver cutting-edge solutions for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ideal for portable electronic devices.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, providing versatility in circuit design.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency in power control circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and placement in circular layouts, optimizing space utilization on circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure solder connections, ensuring reliable performance in various operating conditions.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this transistor can handle moderate power levels, suitable for small signal applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers efficient heat dissipation and mechanical stability, enhancing the overall reliability of the device.

Minimum DC Current Gain (hFE): 25

A minimum DC current gain of 25 ensures consistent and reliable amplification of signals, essential for maintaining signal integrity in electronic circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments, offering robust performance under extreme conditions.

Maximum Collector-Emitter Voltage: 80 V

The maximum collector-emitter voltage of 80 V allows for safe operation in voltage-sensitive circuits, protecting the transistor from potential damage.

Transistor Element Material: SILICON

Silicon-based transistors offer high reliability and performance stability, ensuring consistent operation over a wide range of operating conditions.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1 A, this transistor can handle moderate current levels, making it suitable for small signal amplification and switching applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring long-term reliability and performance in various environments.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and assembly, allowing for easy integration into electronic systems and reducing manufacturing complexity.

Nominal Transition Frequency (fT): 100 MHz

With a nominal transition frequency of 100 MHz, this transistor offers high-speed performance, ideal for applications requiring fast signal switching and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC63916-D27Z attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC63916-D27Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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