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BC63916_D74Z

Fairchild Semiconductor

BC63916_D74Z by Fairchild Semiconductor

Fairchild Semiconductor's BC63916_D74Z is a NPN BJT transistor with 1W power dissipation, hFE of 25, and 80V collector-emitter voltage. Ideal for switching applications, it operates at up to 150°C and has a max collector current of 1A. The through-hole package with tin silver copper finish makes it suitable for various electronic designs.

Median Price

$0.100

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Mouser Electronics

USA . 14,880 parts In-Stock

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DigiKey

USA . 1,226 parts In-Stock

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Verical

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Master Electronics

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Rochester

USA . 1,444 parts In-Stock

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Distrelec

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Chip1Stop

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Nova Conductors

Japan . 1,150 parts In-Stock

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Digiode

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TME

Poland . 377 parts In-Stock

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Kruse Electronics AG

Switzerland . 33,000 parts In-Stock

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NAC Semi

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Chip Stock

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IBS Electronics

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Anansix

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Ampacity Inc.

Singapore . 7,861 parts In-Stock

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Corohmni

South Africa . 210 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Corphita

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GlobX GmbH

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Kulean Microsystems

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Perfect Parts

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SupplyDigital Components

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

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Netroflash

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UHIMA Technologies

Türkiye . 710 parts In-Stock

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Overview

Unleash the power of innovation with the BC63916_D74Z by Fairchild Semiconductor. As a leading manufacturer in the industry, Fairchild Semiconductor delivers top-notch quality and reliability in their Small Signal Bipolar Junction Transistors (BJTs). Ideal for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 80V and a maximum collector current of 1A. With a minimum DC current gain of 25, this transistor is designed to optimize performance and efficiency. Upgrade your electronic projects with the BC63916_D74Z and experience unparalleled value and benefits that only Fairchild Semiconductor can provide.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type:

NPN - Offers high efficiency and performance in switching applications.

Configuration:

SINGLE - Simplifies circuit design and ensures ease of use.

Transistor Application:

SWITCHING - Ideal for applications requiring fast switching speeds and high efficiency.

Package Shape:

ROUND - Allows for easy mounting and integration into circuit boards.

Terminal Form:

THROUGH-HOLE - Ensures secure connections and reliability in various environments.

No. of Terminals:

3 - Provides flexibility in circuit design and connectivity options.

Maximum Power Dissipation (Abs):

1 W - Can handle high power levels while maintaining reliability.

Package Style (Meter):

CYLINDRICAL - Offers compact design and easy integration into electronic devices.

Minimum DC Current Gain (hFE):

25 - Ensures consistent and reliable amplification of signals.

Maximum Operating Temperature:

150 °C - Suitable for use in a wide range of temperature conditions.

Maximum Collector-Emitter Voltage:

80 V - Provides a high voltage rating for increased versatility in circuit design.

Transistor Element Material:

SILICON - Ensures high performance and reliability in various applications.

Maximum Collector Current (IC):

1 A - Capable of handling high current levels for demanding applications.

Terminal Finish:

TIN SILVER COPPER - Provides good conductivity and corrosion resistance for reliable connections.

Terminal Position:

BOTTOM - Enables easy mounting and soldering in circuit boards.

Nominal Transition Frequency (fT):

100 MHz - Offers high-speed performance for demanding applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC63916_D74Z attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC63916_D74Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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