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BC638TA

Onsemi

BC638TA by Onsemi

BC638TA by Onsemi is a PNP BJT transistor with 3 terminals and a max collector current of 1A. It has a min DC current gain of 25, operates at up to 150°C, and can handle a max collector-emitter voltage of 60V. Ideal for switching applications due to its high transition frequency of 100MHz and power dissipation of 0.8W in a cylindrical package style.

Median Price

$0.128

Lifecycle Status

Suppliers In-Stock

28

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 883 parts In-Stock

1+ parts

$0.264

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$0.068

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$0.064

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883

$0.264

$0.068

$0.064

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Mouser Electronics

USA . 9,391 parts In-Stock

1+ parts

$0.360

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$0.140

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$0.092

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$0.077

9,391

$0.360

$0.140

$0.092

$0.077

Newark

USA . 1,194 parts In-Stock

1+ parts

$0.404

100+ parts

$0.119

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$0.093

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$0.067

1,194

$0.404

$0.119

$0.093

$0.067

Rochester

USA . 27,353 parts In-Stock

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$0.061

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$0.051

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$0.045

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Arrow

USA . 14,000 parts In-Stock

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Verical

USA . 14,000 parts In-Stock

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DigiKey

USA . 8,816 parts In-Stock

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RS (Exports)

UK . 4,800 parts In-Stock

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$0.062

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$0.044

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Flip Electronics (Authorized)

USA . 1,717 parts In-Stock

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Farnell

UK . 1,194 parts In-Stock

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$0.095

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$0.051

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$0.095

$0.052

$0.051

Element14

Singapore . 1,194 parts In-Stock

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$0.162

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$0.094

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$0.093

1,194

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$0.162

$0.094

$0.093

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 871 parts In-Stock

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$0.048

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871

$0.048

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Nova Conductors

Japan . 200 parts In-Stock

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$0.085

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200

$0.085

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Bristol Electronics

USA . 2,000 parts In-Stock

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$0.257

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$0.129

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$0.051

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2,000

$0.257

$0.129

$0.051

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TME

Poland . 1,725 parts In-Stock

1+ parts

$0.340

100+ parts

$0.132

1k+ parts

$0.083

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$0.064

1,725

$0.340

$0.132

$0.083

$0.064

Chip Stock

USA . 74,000 parts In-Stock

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VNN

France . 27,690 parts In-Stock

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ComSIT Distribution GmbH

Germany . 26,000 parts In-Stock

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IBS Electronics

USA . 18,000 parts In-Stock

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ComSIT USA

USA . 14,000 parts In-Stock

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Vyrian

USA . 9,507 parts In-Stock

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DigiKey Marketplace

USA . 8,816 parts In-Stock

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NAC Semi

USA . 8,000 parts In-Stock

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Flip Electronics

USA . 2,720 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,000 parts In-Stock

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Dan-Mar Components

USA . 2,000 parts In-Stock

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Sensible Micro Corp

USA . 1,450 parts In-Stock

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Cyclops Electronics Ltd

UK . 980 parts In-Stock

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980

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Distributors (Availability)

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Ampacity Inc.

Singapore . 9,898 parts In-Stock

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$0.034

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Corohmni

South Africa . 494 parts In-Stock

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$0.042

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Corphita

USA . 1,807 parts In-Stock

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Semicontronic

India . 9,922 parts In-Stock

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$0.074

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$0.072

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$0.072

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9,922

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Aztec Data Supply Inc.

USA . 10 parts In-Stock

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$0.083

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10

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Argo Parts USA

USA . 1,430 parts In-Stock

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$0.085

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$0.082

1,430

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Netroflash

USA . 500 parts In-Stock

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$0.083

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500

$0.085

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Continental Prestige Electronics

USA . 1,340 parts In-Stock

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$0.372

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$0.139

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$0.054

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$0.047

1,340

$0.372

$0.139

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$0.047

Perfect Parts

USA . 47,040 parts In-Stock

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Kepictronics

USA . 18,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 10,474 parts In-Stock

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Authorized Procurement Solutions

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Eastek

USA . 10,000 parts In-Stock

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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Metaverse IC Inc.

Canada . 6,413 parts In-Stock

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SupplyDigital Components

Austria . 2,487 parts In-Stock

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TANS Electronics

Latvia . 2,178 parts In-Stock

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Problanco Electronics

Mexico . 1,659 parts In-Stock

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Kulean Microsystems

USA . 1,549 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 656 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the BC638TA by Onsemi. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor offers unmatched quality and reliability. Perfect for switching applications, this PNP transistor provides seamless performance and efficiency. Its compact design and high power dissipation make it ideal for a wide range of electronic devices. Trust Onsemi to deliver excellence with the BC638TA, providing value and performance that exceeds expectations. Elevate your projects to the next level with this cutting-edge component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package durable and resistant to external factors, ensuring the transistor's longevity and reliability.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high power switching applications, making this transistor suitable for such tasks.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes it easier to integrate this transistor into projects.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can quickly turn on/off in high-speed operations.

Package Shape: ROUND

Round shape allows for compact circuit board layout and easier installation in tight spaces.

Terminal Form: THROUGH-HOLE

Through-hole terminals facilitate easy soldering and secure connection to the circuit board.

Maximum Power Dissipation (Abs): 0.8 W

With a maximum power dissipation of 0.8W, this transistor can handle moderate power levels without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides mechanical stability and efficient heat dissipation for improved performance.

Minimum DC Current Gain (hFE): 25

Minimum DC current gain ensures reliable amplification and stable operation in various circuit configurations.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for operation in a wide range of environments without sacrificing performance.

Maximum Collector-Emitter Voltage: 60 V

With a maximum collector-emitter voltage of 60V, this transistor can handle moderate voltage levels in switching applications.

Transistor Element Material: SILICON

Silicon material offers high reliability, low leakage currents, and consistent performance characteristics for electronic components.

Maximum Collector Current (IC): 1 A

Maximum collector current of 1A enables this transistor to handle moderate current levels in switching applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and allows for easier mounting and soldering of the transistor.

Nominal Transition Frequency (fT): 100 MHz

Nominal transition frequency of 100MHz indicates the transistor's ability to operate at high frequencies, suitable for switching applications with fast response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC638TA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC638TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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