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BC638T&A

Continental Device India

BC638T&A by Continental Device India

BC638T&A by Continental Device India is a PNP BJT transistor with 3 terminals, max power dissipation of 0.8W, and max collector current of 1A. It is used for switching applications at a max operating temperature of 150°C. The transistor has a min DC current gain of 25 and nominal transition frequency of 100MHz.

Median Price

$0.085

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 900 parts In-Stock

1+ parts

$0.085

100+ parts

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1k+ parts

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900

$0.085

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Vyrian

USA . 692 parts In-Stock

1+ parts

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692

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 5,866 parts In-Stock

1+ parts

$0.085

100+ parts

-

1k+ parts

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10k+ parts

$0.083

5,866

$0.085

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$0.083

Argo Parts USA

USA . 3,226 parts In-Stock

1+ parts

$0.085

100+ parts

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1k+ parts

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$0.082

3,226

$0.085

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$0.082

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.085

100+ parts

$0.083

1k+ parts

-

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2,000

$0.085

$0.083

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AZTECH Wire

Italy . 692 parts In-Stock

1+ parts

$19.823

100+ parts

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692

$19.823

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Overview

Elevate your electronic projects with the BC638T&A by Continental Device India. This Small Signal Bipolar Junction Transistor offers high-quality performance and reliability, making it ideal for switching applications. With a maximum power dissipation of 0.8 W and a maximum collector-emitter voltage of 60V, this PNP transistor delivers exceptional value and efficiency. Whether you're a hobbyist or a professional, the BC638T&A provides the perfect solution for your circuit design needs. Upgrade your creations today with this versatile and durable component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration into PNP transistor circuits, enhancing compatibility and versatility.

Configuration: SINGLE

Simplifies circuit design and installation, making the transistor user-friendly and efficient.

Transistor Application: SWITCHING

Ideal for fast switching applications, ensuring quick and reliable performance in various electronic systems.

Package Shape: ROUND

Offers a compact and space-saving design, making it suitable for applications with limited space.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and mounting onto PCBs, ensuring secure connections and reliable operation.

No. of Terminals: 3

Provides the necessary connections for the transistor to function effectively in a circuit.

Maximum Power Dissipation: 0.8 W

Handles high power levels effectively, making the transistor suitable for demanding applications.

Package Style: CYLINDRICAL

Provides a robust and reliable package design, ensuring long-term performance and durability.

Minimum DC Current Gain (hFE): 25

Ensures consistent and stable amplification of current, enhancing the transistor's efficiency.

Maximum Operating Temperature: 150 °C

Allows the transistor to operate reliably in high-temperature environments, expanding its range of applications.

Maximum Collector-Emitter Voltage: 60 V

Withstands high voltage levels, making the transistor suitable for voltage-sensitive applications.

Transistor Element Material: SILICON

Offers high performance and reliability, ensuring the transistor delivers consistent results over time.

Maximum Collector Current (IC): 1 A

Handles high current loads effectively, making the transistor suitable for power applications.

Terminal Finish: MATTE TIN

Provides excellent conductivity and corrosion resistance, ensuring stable connections and long-term performance.

Terminal Position: BOTTOM

Simplifies PCB layout and installation, making the transistor easy to integrate into electronic systems.

Nominal Transition Frequency (fT): 100 MHz

Enables high-frequency operation, making the transistor suitable for RF and signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC638T&A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Continental Device India

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC638T&A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Continental Device India

Continental Device India Ltd., (CDIL) is an ISO 9001, IATF 16949, and ISO 14001 certified company that pioneered the manufacturing of Silicon Semiconductor Chips and Devices in India in 1964. It launched its Electronic Manufacturing Services (EMS) division (Deltron) in 1982. Manufacturing semiconductors for over 50 years, has created a name for CDIL in India and a brand that is recognized globally. This has only been possible by adhering to international standards of quality, constant technology and process upgrades, and due to the hard work of a team of dedicated professionals who have laid down the standards for R&D, engineering and management in India.

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