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UMA4NT1G

Onsemi

UMA4NT1G by Onsemi

UMA4NT1G by Onsemi is a PNP BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max power dissipation of 0.15W, and min DC current gain of 160. Ideal for switching applications, it comes in a small outline package with gull wing terminals for surface mount assembly.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 6,797 parts In-Stock

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Digiode

USA . 135 parts In-Stock

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AZTECH Wire

Italy . 148 parts In-Stock

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$16.610

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Kepictronics

USA . 39,000 parts In-Stock

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Metaverse IC Inc.

Canada . 33,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 20,864 parts In-Stock

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Kulean Microsystems

USA . 7,413 parts In-Stock

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SupplyDigital Components

Austria . 6,950 parts In-Stock

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Problanco Electronics

Mexico . 6,560 parts In-Stock

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TANS Electronics

Latvia . 4,951 parts In-Stock

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Corphita

USA . 556 parts In-Stock

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UHIMA Technologies

Türkiye . 371 parts In-Stock

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Corohmni

South Africa . 282 parts In-Stock

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Overview

Upgrade your electronic projects with the UMA4NT1G PNP transistor from Onsemi! Designed for switching applications, this small signal BJT offers reliability and performance. With a common emitter configuration and built-in resistor, it's easy to integrate into your circuits. The compact rectangular package with gull wing terminals makes surface mounting a breeze. Trust Onsemi's reputation for quality and innovation when choosing the UMA4NT1G for your next project. Unlock new possibilities and efficiency with this versatile and efficient component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP type transistors, offering flexibility in circuit design.

Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and allows for easy integration into applications requiring a common emitter configuration.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Allows for easy and compact mounting on PCBs, saving space and facilitating automated manufacturing processes.

Package Shape: RECTANGULAR

Simplifies placement and orientation on the PCB, contributing to ease of manufacturing and assembly.

Minimum DC Current Gain (hFE): 160

Provides high current gain, ensuring amplification of signals with minimal input current, improving overall efficiency.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications requiring low to medium voltage operation, offering a wide range of use cases.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, making it suitable for various switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) UMA4NT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

160

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

UMA4NT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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