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UMA4NT2

Onsemi

UMA4NT2 by Onsemi

UMA4NT2 by Onsemi is a PNP BJT with 2 elements, built-in resistor, and hFE of 160. It has a max VCE of 50V and IC of 0.1A, suitable for switching applications in surface mount designs. The package is a small outline with Gull Wing terminals, ideal for compact electronic devices.

Median Price

$0.132

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

$0.132

1k+ parts

$0.110

10k+ parts

$0.098

6,000

-

$0.132

$0.110

$0.098

DigiKey

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.170

6,000

-

-

-

$0.170

Verical

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.122

6,000

-

-

-

$0.122

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 842 parts In-Stock

1+ parts

$0.085

100+ parts

-

1k+ parts

-

10k+ parts

-

842

$0.085

-

-

-

Digiode

USA . 1,228 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

-

10k+ parts

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1,228

$0.103

-

-

-

Chip Stock

USA . 61,000 parts In-Stock

1+ parts

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61,000

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 280 parts In-Stock

1+ parts

$0.085

100+ parts

-

1k+ parts

-

10k+ parts

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280

$0.085

-

-

-

Corphita

USA . 62 parts In-Stock

1+ parts

$0.097

100+ parts

-

1k+ parts

-

10k+ parts

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62

$0.097

-

-

-

Problanco Electronics

Mexico . 6,367 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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6,367

-

-

-

-

Continental Prestige Electronics

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.085

10k+ parts

-

6,000

-

-

$0.085

-

Kulean Microsystems

USA . 3,640 parts In-Stock

1+ parts

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3,640

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SupplyDigital Components

Austria . 3,138 parts In-Stock

1+ parts

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100+ parts

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3,138

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-

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UHIMA Technologies

Türkiye . 848 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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848

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TANS Electronics

Latvia . 219 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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219

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Overview

Discover the UMA4NT2 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that provides unmatched performance and reliability. Manufactured by industry leaders, Onsemi, this PNP transistor is perfect for switching applications, offering seamless functionality in a compact package. With its common emitter configuration and built-in resistor, this transistor is designed to deliver optimal results. Experience the value of precision engineering with the UMA4NT2 – your go-to solution for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a good balance of strength and affordability, making the product suitable for a wide range of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this product versatile for various circuit designs.

Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making this product efficient for use in compact electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Facilitates easy and secure mounting on PCBs, enhancing the product's reliability in electronic assemblies.

Package Shape: RECTANGULAR

The rectangular shape helps in efficient PCB layout and placement, optimizing space utilization.

Terminal Form: GULL WING

Gull wing terminals provide mechanical strength and easy soldering during assembly, ensuring a reliable connection.

Minimum DC Current Gain (hFE): 160

High DC current gain allows for amplification of weak signals with minimal distortion, contributing to the product's performance.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to moderate voltage applications, making the product versatile for a wide range of electronic circuits.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current flows, making it suitable for various small signal applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) UMA4NT2 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

160

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

UMA4NT2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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