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MPSW01ARLRAG

Onsemi

MPSW01ARLRAG by Onsemi

MPSW01ARLRAG by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 2.5W, and max collector current of 1A. Ideal for applications requiring a single configuration transistor with a min DC current gain of 50 (hFE), operating up to 150 °C.

Median Price

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Lifecycle Status

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4

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1k+

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Chip Stock

USA . 76,000 parts In-Stock

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Vyrian

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Velocity Electronics

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AZTECH Wire

Italy . 789 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 21,331 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

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Kulean Microsystems

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TANS Electronics

Latvia . 4,109 parts In-Stock

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Perfect Parts

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Metaverse IC Inc.

Canada . 1,714 parts In-Stock

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Overview

Upgrade your electronic projects with the MPSW01ARLRAG by Onsemi. Crafted with precision and expertise, this NPN Small Signal Bipolar Junction Transistor offers unparalleled performance and reliability. Ideal for a variety of applications, this transistor boasts a maximum collector current of 1A and a transition frequency of 50 MHz, ensuring optimal functionality in your circuits. Trust in Onsemi's reputation for quality and innovation, and experience the value and benefits that the MPSW01ARLRAG brings to your projects. Elevate your designs with this high-quality component today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for a wide range of applications.

Configuration: SINGLE

SINGLE configuration makes it easier to use and integrate into circuits.

Package Shape: ROUND

The round shape allows for easy mounting and assembly in various electronic devices.

Maximum Power Dissipation (Abs): 2.5 W

With a high power dissipation capability, this transistor can handle higher loads without overheating.

Maximum Operating Temperature: 150 °C

The high operating temperature range makes this transistor suitable for use in a variety of environments.

Maximum Collector-Emitter Voltage: 40 V

With a high collector-emitter voltage rating, this transistor can handle higher voltages in circuits.

Minimum DC Current Gain (hFE): 50

Having a minimum DC current gain of 50 ensures stable and consistent amplification in circuits.

Maximum Collector Current (IC): 1 A

With a high collector current rating, this transistor can handle higher currents without damage.

Nominal Transition Frequency (fT): 50 MHz

The high transition frequency allows this transistor to operate at high frequencies, making it suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW01ARLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-226

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW01ARLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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