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MPSA92G

Onsemi

MPSA92G by Onsemi

MPSA92G by Onsemi is a PNP BJT transistor with max. power dissipation of 0.625W, hFE of 25, and VCE of 300V. Ideal for amplifier applications due to its single configuration and cylindrical package style.

Median Price

$0.042

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Nova Conductors

Japan . 84 parts In-Stock

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$0.048

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Vyrian

USA . 7,439 parts In-Stock

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Bristol Electronics

USA . 6,380 parts In-Stock

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Schukat

Germany . 5,900 parts In-Stock

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$0.035

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$0.022

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$0.021

5,900

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$0.035

$0.022

$0.021

Atlantic Semiconductor

USA . 5,481 parts In-Stock

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Digiode

USA . 2,238 parts In-Stock

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Inventory MP

USA . 965 parts In-Stock

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965

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Chip Stock

USA . 362 parts In-Stock

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362

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Diverse Electronics

Canada . 112 parts In-Stock

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Corohmni

South Africa . 317 parts In-Stock

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$0.035

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317

$0.035

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Continental Prestige Electronics

USA . 3,020 parts In-Stock

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$0.040

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$0.039

3,020

$0.040

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$0.039

Argo Parts USA

USA . 380 parts In-Stock

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$0.040

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$0.039

380

$0.040

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$0.039

Aranea Global

USA . 50 parts In-Stock

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$0.047

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$0.045

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50

$0.047

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$0.045

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Aztec Data Supply Inc.

USA . 4,870 parts In-Stock

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$0.780

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4,870

$0.780

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Advanced Electronics

New Zealand . 270 parts In-Stock

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$1.594

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$1.515

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$1.515

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270

$1.594

$1.515

$1.515

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AZTECH Wire

Italy . 715 parts In-Stock

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$11.212

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715

$11.212

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Semicontronic

India . 128 parts In-Stock

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$43.050

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$41.974

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$41.758

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128

$43.050

$41.974

$41.758

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Ampacity Inc.

Singapore . 1,197 parts In-Stock

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$65.050

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Perfect Parts

USA . 31,600 parts In-Stock

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Kepictronics

USA . 20,000 parts In-Stock

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Lixinc

USA . 13,618 parts In-Stock

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SupplyDigital Components

Austria . 7,696 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,143 parts In-Stock

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Kulean Microsystems

USA . 6,041 parts In-Stock

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Metaverse IC Inc.

Canada . 3,487 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Problanco Electronics

Mexico . 2,749 parts In-Stock

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TANS Electronics

Latvia . 1,565 parts In-Stock

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Futuretech Components

Singapore . 750 parts In-Stock

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750

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Corphita

USA . 661 parts In-Stock

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661

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UHIMA Technologies

Türkiye . 413 parts In-Stock

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413

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GreenTree Electronics

Israel . 7 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality MPSA92G by Onsemi, a top-tier manufacturer in the industry. This Small Signal Bipolar Junction Transistor (BJT) offers exceptional performance as an amplifier, providing customers with reliability and precision in their applications. With a maximum collector-emitter voltage of 300V and a nominal transition frequency of 50 MHz, this PNP transistor is ideal for a wide range of projects. Trust Onsemi to deliver cutting-edge technology and choose the MPSA92G for unparalleled value and efficiency in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Useful for amplifier applications where PNP transistors are commonly used.

Configuration: SINGLE

Simplified design and easier integration into circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in such scenarios.

Package Shape: ROUND

Compact and space-saving design, ideal for applications where space is limited.

Maximum Power Dissipation (Abs): 0.625 W

Can handle higher power levels, making it suitable for a variety of applications.

Maximum Collector-Emitter Voltage: 300 V

Able to withstand high voltages, suitable for a wide range of voltage requirements.

Minimum DC Current Gain (hFE): 25

Consistent and reliable amplification of signals.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Transistor Element Material: SILICON

High-quality material known for its reliability and efficiency in electronic components.

Nominal Transition Frequency (fT): 50 MHz

High frequency capability for fast signal processing and response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA92G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA92G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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