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MPSA06RLRMG

Onsemi

MPSA06RLRMG by Onsemi

MPSA06RLRMG by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 80V and max current of 0.5A. With a min DC current gain of 100, it's ideal for amplifier applications. This through-hole transistor has a max power dissipation of 0.625W and operates up to 150 °C.

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Italy . 623 parts In-Stock

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TANS Electronics

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Problanco Electronics

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

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Overview

Discover the power of precision with the MPSA06RLRMG from Onsemi! This small signal bipolar junction transistor offers superior quality and reliability, making it ideal for a wide range of amplifier applications. With a maximum power dissipation of 0.625W and a peak reflow temperature of 260 °C, this NPN transistor provides unmatched performance and durability. Trust Onsemi's expertise in semiconductor manufacturing to deliver a product that exceeds your expectations. Upgrade your projects with the MPSA06RLRMG and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and heat dissipation, making the transistor durable and reliable for various applications.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, the NPN configuration allows for easy integration into existing designs.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in audio and other signal amplification applications.

Maximum Power Dissipation (Abs): 0.625 W

With a high power dissipation rating, this transistor can handle moderate levels of power without overheating or failing.

Minimum DC Current Gain (hFE): 100

Having a high DC current gain ensures that the transistor can provide sufficient amplification for signals, leading to better overall performance.

Maximum Operating Temperature: 150 °C

Capable of operating in high-temperature environments, making it suitable for a wide range of applications where heat may be a concern.

Maximum Collector-Emitter Voltage: 80 V

With a high collector-emitter voltage rating, this transistor can withstand higher voltage levels, providing flexibility in circuit design.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate collector currents, making it suitable for various amplifier circuits and applications.

Nominal Transition Frequency (fT): 100 MHz

With a high transition frequency, this transistor can amplify signals at higher frequencies accurately, making it suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA06RLRMG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA06RLRMG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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