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2N4403RLRMG

Onsemi

2N4403RLRMG by Onsemi

2N4403RLRMG by Onsemi is a PNP BJT transistor with max. power dissipation of 1.5W, hFE of 100, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 200MHz).

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 9,465 parts In-Stock

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Digiode

USA . 1,899 parts In-Stock

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Native Components

USA . 614 parts In-Stock

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$0.126

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$0.121

614

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Northwest PG Solutions

USA . 1,060 parts In-Stock

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$0.138

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AZTECH Wire

Italy . 1,044 parts In-Stock

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$19.790

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TANS Electronics

Latvia . 7,861 parts In-Stock

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SupplyDigital Components

Austria . 3,693 parts In-Stock

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Problanco Electronics

Mexico . 1,800 parts In-Stock

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Kulean Microsystems

USA . 906 parts In-Stock

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UHIMA Technologies

Türkiye . 506 parts In-Stock

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Corphita

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Corohmni

South Africa . 66 parts In-Stock

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Overview

Unlock the power of innovation with the 2N4403RLRMG by Onsemi - a top-tier manufacturer known for its superior quality and reliability in the realm of small signal bipolar junction transistors. Ideal for switching applications, this PNP transistor offers unmatched performance and efficiency while boasting a maximum collector-emitter voltage of 40V and a minimum DC current gain of 100. With a peak reflow temperature of 260 °C and a nominal transition frequency of 200 MHz, this product is designed to deliver exceptional results in a wide range of electronic devices. Elevate your projects with the 2N4403RLRMG and experience the difference in performance and precision it brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, providing flexibility and compatibility with various circuit designs.

Configuration: SINGLE

Simplified design for easy integration into circuits, making it ideal for straightforward switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and rapid performance in controlling electrical signals.

Maximum Power Dissipation (Abs): 1.5 W

Capable of handling moderate power levels, making it suitable for a wide range of applications without risk of overheating.

Maximum Collector-Emitter Voltage: 40 V

With a high voltage rating, this transistor can handle higher voltage levels, making it versatile for various voltage requirements.

Minimum DC Current Gain (hFE): 100

A high DC current gain ensures reliable amplification and signal control, making it a dependable choice for signal processing applications.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures without performance degradation, ensuring stability and reliability in demanding environments.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for fast switching speeds, making it ideal for applications requiring rapid response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N4403RLRMG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

255 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

2N4403RLRMG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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