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MPSW56RLRAG

Onsemi

MPSW56RLRAG by Onsemi

MPSW56RLRAG by Onsemi is a PNP BJT with 80V VCEO, 50MHz fT, and 1W power dissipation. Ideal for amplifier applications due to its single configuration and hFE of 50. Its through-hole terminals and cylindrical package make it suitable for various electronic designs.

Median Price

$0.150

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 6,000 parts In-Stock

1+ parts

$0.240

100+ parts

-

1k+ parts

$0.185

10k+ parts

$0.172

6,000

$0.240

-

$0.185

$0.172

Chip1Stop

Japan . 450 parts In-Stock

1+ parts

$0.984

100+ parts

$0.246

1k+ parts

-

10k+ parts

-

450

$0.984

$0.246

-

-

Rochester

USA . 306,191 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

306,191

-

$0.119

$0.099

$0.088

DigiKey

USA . 306,191 parts In-Stock

1+ parts

-

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$0.150

306,191

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$0.150

Verical

USA . 172,194 parts In-Stock

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-

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$0.110

172,194

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$0.110

Distributors (In-Stock)

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Digiode

USA . 228 parts In-Stock

1+ parts

$0.093

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-

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228

$0.093

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DigiKey Marketplace

USA . 306,191 parts In-Stock

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306,191

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Chip Stock

USA . 66,000 parts In-Stock

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66,000

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J2 Sourcing AB

Sweden . 9,974 parts In-Stock

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9,974

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Vyrian

USA . 4,981 parts In-Stock

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4,981

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,458 parts In-Stock

1+ parts

$0.088

100+ parts

-

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1,458

$0.088

-

-

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Corohmni

South Africa . 372 parts In-Stock

1+ parts

$0.098

100+ parts

-

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372

$0.098

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Component Stockers USA

USA . 312,870 parts In-Stock

1+ parts

$0.100

100+ parts

$0.090

1k+ parts

$0.090

10k+ parts

$0.090

312,870

$0.100

$0.090

$0.090

$0.090

AZTECH Wire

Italy . 1,171 parts In-Stock

1+ parts

$17.870

100+ parts

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1,171

$17.870

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Continental Prestige Electronics

USA . 306,191 parts In-Stock

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$0.088

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306,191

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$0.088

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Problanco Electronics

Mexico . 8,350 parts In-Stock

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8,350

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SupplyDigital Components

Austria . 8,308 parts In-Stock

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Perfect Parts

USA . 5,171 parts In-Stock

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TANS Electronics

Latvia . 4,872 parts In-Stock

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4,872

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UHIMA Technologies

Türkiye . 882 parts In-Stock

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882

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Kulean Microsystems

USA . 534 parts In-Stock

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534

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Authorized Procurement Solutions

USA . 470 parts In-Stock

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470

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GreenTree Electronics

Israel . 470 parts In-Stock

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470

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Overview

Upgrade your amplifier performance with the MPSW56RLRAG Small Signal Bipolar Junction Transistor by Onsemi. This high-quality PNP transistor offers reliable single configuration for a wide range of applications, ensuring maximum power dissipation and superior performance. With a minimum DC current gain of 50 and a maximum operating temperature of 150 °C, this transistor guarantees efficient operation and durability. Trust Onsemi's expertise in semiconductor manufacturing to deliver a product that meets your amplifier needs with precision and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

This PNP transistor can easily amplify signals and is commonly used in audio amplifiers and switching circuits.

Configuration: SINGLE

Simplifies circuit design and makes the transistor easy to use in various electronic projects.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications, ensuring high performance in audio or signal amplification circuits.

Maximum Power Dissipation (Abs): 1 W

Capable of handling up to 1 watt of power dissipation, making it suitable for medium power applications.

Maximum Operating Temperature: 150 °C

Can operate efficiently in a wide range of temperatures, providing versatility for different environmental conditions.

Maximum Collector-Emitter Voltage: 80 V

With a high collector-emitter voltage rating, this transistor can handle higher voltages without breakdown.

Nominal Transition Frequency (fT): 50 MHz

Has a high transition frequency, allowing for reliable high-frequency signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW56RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW56RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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