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2N4401G

Onsemi

2N4401G by Onsemi

2N4401G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 250MHz).

Median Price

$0.977

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

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Chip1Stop

Japan . 2 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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$0.079

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Digiode

USA . 2,232 parts In-Stock

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Vyrian

USA . 7,722 parts In-Stock

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Chip Stock

USA . 5,500 parts In-Stock

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VNN

France . 4,852 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 4,825 parts In-Stock

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Sensible Micro Corp

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ComSIT Distribution GmbH

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ACDS - Activité Composants Distribution Service

France . 1,130 parts In-Stock

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Holdelec - ElecDif-Pro

France . 1,130 parts In-Stock

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Prism Electronics

USA . 231 parts In-Stock

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Pegasus Components GmbH

Germany . 82 parts In-Stock

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Bristol Electronics

USA . 52 parts In-Stock

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Corohmni

South Africa . 349 parts In-Stock

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$0.078

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Netroflash

USA . 1,000 parts In-Stock

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$0.079

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$0.076

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$0.074

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$0.076

$0.074

Ampacity Inc.

Singapore . 2 parts In-Stock

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$0.830

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Corphita

USA . 550 parts In-Stock

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$0.879

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$0.879

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AZTECH Wire

Italy . 562 parts In-Stock

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Authorized Procurement Solutions

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Lixinc

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SupplyDigital Components

Austria . 5,488 parts In-Stock

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ChipstoGo Electronic ltd

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A-Z Elektronik GmbH

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TANS Electronics

Latvia . 4,826 parts In-Stock

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Metaverse IC Inc.

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Kepictronics

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Glotronic Ltd.

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Problanco Electronics

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Futuretech Components

Singapore . 1,082 parts In-Stock

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UHIMA Technologies

Türkiye . 900 parts In-Stock

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Kulean Microsystems

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GreenTree Electronics

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Overview

Looking for a reliable and high-quality solution for your switching applications? Look no further than the 2N4401G by Onsemi! With its durable plastic/epoxy construction, NPN configuration, and maximum power dissipation of 0.35W, this small signal bipolar junction transistor is perfect for a wide range of uses. From amplifiers to voltage regulators, the 2N4401G delivers exceptional performance and reliability. Trust Onsemi's expertise in semiconductor manufacturing to bring you a product that offers unbeatable value and benefits. Upgrade your electronic projects with the 2N4401G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability in various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching applications, offering high efficiency and low noise.

Configuration: SINGLE

Simplifies circuit design and integration, making this transistor easy to use in various electronic circuits.

Transistor Application: SWITCHING

Designed specifically for fast switching operations, offering high performance in switching applications.

Package Shape: ROUND

Provides a compact and space-saving design, suitable for applications where size is a constraint.

Maximum Power Dissipation: 0.35 W

Can handle moderate power levels, making it suitable for small signal applications without overheating.

Maximum Collector-Emitter Voltage: 40 V

Suitable for low voltage applications, offering protection against voltage spikes and surges.

Nominal Transition Frequency: 250 MHz

Offers high frequency response, making it ideal for high-speed applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N4401G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

255 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

2N4401G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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