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BC237BRL1G

Onsemi

BC237BRL1G by Onsemi

BC237BRL1G by Onsemi is a NPN BJT transistor with a max power dissipation of 0.35W and min DC current gain of 200, ideal for amplifier applications. It has a max collector-emitter voltage of 45V, operating temperature up to 150°C, and nominal transition frequency of 200MHz in a cylindrical package.

Median Price

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Lifecycle Status

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11

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1k+

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Chip Stock

USA . 79,000 parts In-Stock

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Freddi Giovanni

Italy . 38,000 parts In-Stock

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Vyrian

USA . 10,567 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 7,850 parts In-Stock

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7,850

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ComSIT Distribution GmbH

Germany . 6,000 parts In-Stock

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ComSIT USA

USA . 6,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 5,800 parts In-Stock

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5,800

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LIBRA Elektronik GmbH

Germany . 1,700 parts In-Stock

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1,700

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VNN

France . 1,582 parts In-Stock

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Digiode

USA . 468 parts In-Stock

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468

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Nova Conductors

Japan . 10 parts In-Stock

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AZTECH Wire

Italy . 644 parts In-Stock

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$10.921

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644

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Ampacity Inc.

Singapore . 270 parts In-Stock

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$23.050

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Perfect Parts

USA . 78,566 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 11,800 parts In-Stock

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Glotronic Ltd.

UK . 4,640 parts In-Stock

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Argo Parts USA

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SupplyDigital Components

Austria . 4,553 parts In-Stock

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TANS Electronics

Latvia . 3,709 parts In-Stock

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Kulean Microsystems

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Corphita

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Continental Prestige Electronics

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Problanco Electronics

Mexico . 812 parts In-Stock

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Corohmni

South Africa . 453 parts In-Stock

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UHIMA Technologies

Türkiye . 404 parts In-Stock

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Overview

Elevate your amplifier designs with the BC237BRL1G by Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor (BJT) that guarantees unparalleled quality and performance. Manufactured by industry leader Onsemi, this NPN transistor boasts a minimum DC current gain of 200 and a maximum collector-emitter voltage of 45V, making it ideal for a wide range of applications. With a maximum power dissipation of 0.35W and a nominal transition frequency of 200MHz, this transistor offers exceptional value and reliability to customers looking to enhance their electronic projects. Trust Onsemi's expertise and choose the BC237BRL1G for all your amplifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan and reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and offer high efficiency and performance for signal amplification.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use this transistor in various amplifier applications.

Maximum Power Dissipation: 0.35 W

The high power dissipation capability allows the transistor to handle moderate power levels without overheating or damaging the device.

Minimum DC Current Gain (hFE): 200

With a minimum DC current gain of 200, this transistor provides consistent and reliable amplification of input signals in amplifier circuits.

Maximum Collector-Emitter Voltage: 45 V

The high maximum collector-emitter voltage rating ensures that the transistor can withstand higher voltages, increasing its versatility in different applications.

Maximum Collector Current (IC): 0.1 A

The transistor can handle a maximum collector current of 0.1 A, making it suitable for small signal amplification and low-power applications.

Nominal Transition Frequency (fT): 200 MHz

The high cutoff frequency of 200 MHz indicates that this transistor can effectively amplify signals with high frequencies, making it ideal for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC237BRL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC237BRL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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