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MPSA44RL1G

Onsemi

MPSA44RL1G by Onsemi

MPSA44RL1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. Featuring a min. DC current gain of 40 and max. power dissipation of 0.625W, it operates at up to 150 °C. Its through-hole package style makes it suitable for various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Chip Stock

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Lantek

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Digiode

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Component Sense

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AZTECH Wire

Italy . 890 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

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SupplyDigital Components

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Problanco Electronics

Mexico . 4,840 parts In-Stock

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GreenTree Electronics

Israel . 4,000 parts In-Stock

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TANS Electronics

Latvia . 3,601 parts In-Stock

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ChipstoGo Electronic ltd

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South Africa . 360 parts In-Stock

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Overview

Enhance your electronic projects with the MPSA44RL1G by Onsemi, a top-quality small signal bipolar junction transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor is ideal for switching applications, providing seamless operation and efficiency. With a maximum collector-emitter voltage of 400V and a DC current gain of 40, this transistor delivers outstanding results while ensuring durability. Upgrade your designs with the MPSA44RL1G and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

Suitable for applications where an NPN transistor is required for proper circuit operation.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Package Shape: ROUND

Compact and space-saving design, ideal for applications where space is limited.

Maximum Power Dissipation (Abs): 0.625 W

Can handle moderate power dissipation levels, suitable for a wide range of applications.

Minimum DC Current Gain (hFE): 40

Provides sufficient current gain for proper transistor operation in circuits.

Maximum Collector-Emitter Voltage: 400 V

Can handle relatively high voltage levels, making it versatile for various circuit configurations.

Maximum Collector Current (IC): 0.3 A

Can handle moderate current levels, suitable for many switching applications.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance for reliable connections.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA44RL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MPSA44RL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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