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NSBA124EDXV6T5G

Onsemi

NSBA124EDXV6T5G by Onsemi

NSBA124EDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 60. It has VCE of 50V, IC of 0.1A, and Ptot of 0.5W. Ideal for small outline applications requiring high DC current gain and low collector-emitter voltage.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 68,000 parts In-Stock

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Vyrian

USA . 10,063 parts In-Stock

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Digiode

USA . 1,082 parts In-Stock

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AZTECH Wire

Italy . 998 parts In-Stock

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$9.270

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Component Stockers USA

USA . 622 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 27,249 parts In-Stock

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SupplyDigital Components

Austria . 7,682 parts In-Stock

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Kulean Microsystems

USA . 5,636 parts In-Stock

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TANS Electronics

Latvia . 2,420 parts In-Stock

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Corphita

USA . 2,170 parts In-Stock

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Problanco Electronics

Mexico . 1,579 parts In-Stock

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UHIMA Technologies

Türkiye . 816 parts In-Stock

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Corohmni

South Africa . 470 parts In-Stock

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Overview

Unlock the power of innovation with the NSBA124EDXV6T5G by Onsemi. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) offers unmatched quality and performance. Ideal for applications requiring high reliability and efficiency, this PNP transistor with built-in resistors is a game-changer in the electronics industry. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 60, this product provides exceptional value and benefits to customers looking for superior components for their projects. Experience the difference with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package durable and resistant to external damage, ensuring reliable performance.

Polarity or Channel Type: PNP

PNP configuration is suitable for many applications and allows for easy integration into different circuit designs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Having 2 separate elements with built-in resistor simplifies circuit design and saves space on the PCB.

Surface Mount: YES

Surface mount capability makes the transistor easy to assemble on PCBs, improving manufacturing efficiency.

Package Shape: RECTANGULAR

Rectangular package shape facilitates easy placement and mounting on the circuit board.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power levels effectively.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures reliable amplification in various circuit applications.

Maximum Collector-Emitter Voltage: 50 V

A maximum collector-emitter voltage of 50V allows for use in a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon material in the transistor element provides stable performance and high reliability.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels efficiently.

Terminal Finish: TIN

Terminal finish with tin provides good electrical conductivity and solderability for easy and reliable connections.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C ensures proper soldering during assembly, leading to a secure connection.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBA124EDXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

NSBA124EDXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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