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BCR183L3E6327

Infineon Technologies

BCR183L3E6327 by Infineon Technologies

Infineon's BCR183L3E6327 is a PNP BJT with max. power dissipation of 0.25W, min. DC current gain of 30, and max. collector current of 0.1A. Ideal for surface mount applications in electronics due to its silicon element material and peak reflow temp of 260°C.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Vyrian

USA . 5,351 parts In-Stock

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VNN

France . 1,140 parts In-Stock

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Digiode

USA . 614 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Modulus Dynamics

Lithuania . 16,880 parts In-Stock

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$1.384

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$1.329

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$1.273

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AZTECH Wire

Italy . 763 parts In-Stock

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$15.723

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Ampacity Inc.

Singapore . 327 parts In-Stock

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$60.050

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$60.050

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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Continental Prestige Electronics

USA . 6,822 parts In-Stock

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Microchip USA

USA . 2,979 parts In-Stock

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Argo Parts USA

USA . 2,634 parts In-Stock

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Corphita

USA . 251 parts In-Stock

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Bastille Electronics

Australia . 50 parts In-Stock

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Overview

Unleash the power of innovation with the BCR183L3E6327 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies delivers top-quality Small Signal Bipolar Junction Transistors (BJT) like no other. The BCR183L3E6327, with its PNP polarity and surface mount design, offers a maximum collector current of 0.1 A and minimum DC current gain of 30, making it perfect for a wide range of applications. Experience unparalleled performance and reliability with this product, providing customers with unmatched value and benefits in their projects.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP polarity allows for easier integration with certain types of circuits and designs.

Surface Mount: YES

Surface mount capability enables easy and convenient placement on PCBs, saving space and facilitating automated assembly processes.

Maximum Power Dissipation (Abs): 0.25 W

With a high maximum power dissipation, this transistor can handle a significant amount of power, making it suitable for a variety of applications.

Minimum DC Current Gain (hFE): 30

The minimum DC current gain ensures reliable amplification and signal processing capabilities.

Transistor Element Material: SILICON

Silicon is a commonly used and reliable material for transistors, offering good performance and durability.

Maximum Collector Current (IC): 0.1 A

The high maximum collector current allows for handling moderate levels of current, making it suitable for numerous electronic circuits.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures that the transistor can withstand the soldering process during assembly, guaranteeing its reliability.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR183L3E6327 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

30

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON

Trade Compliance

BCR183L3E6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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