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NSBA123JDXV6T1G

Onsemi

NSBA123JDXV6T1G by Onsemi

NSBA123JDXV6T1G by Onsemi is a PNP BJT with 2 elements, built-in resistor, and max. power dissipation of 0.5W. It has hFE of 80, VCE of 50V, and IC of 0.1A. Ideal for applications requiring small outline package style in surface mount technology.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

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Vyrian

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Digiode

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AZTECH Wire

Italy . 1,073 parts In-Stock

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Kepictronics

USA . 48,000 parts In-Stock

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Kulean Microsystems

USA . 2,565 parts In-Stock

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Problanco Electronics

Mexico . 2,304 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 1,391 parts In-Stock

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SupplyDigital Components

Austria . 1,272 parts In-Stock

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Corphita

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Corohmni

South Africa . 480 parts In-Stock

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UHIMA Technologies

Türkiye . 386 parts In-Stock

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Overview

Unlock the power of innovation with the NSBA123JDXV6T1G by Onsemi. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) offers unparalleled performance and reliability. Whether you're designing cutting-edge electronics or enhancing existing systems, this PNP transistor with built-in resistor is the perfect choice. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 80, this transistor delivers exceptional quality and efficiency. Trust Onsemi to provide you with a product that exceeds expectations and brings your projects to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration with PNP circuits and helps in achieving specific circuit requirements.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Offers flexibility in circuit design and simplifies the overall layout by incorporating built-in resistors.

Surface Mount: YES

Enables easy and secure mounting on PCBs, saving space and simplifying assembly processes.

Maximum Power Dissipation (Abs): 0.5 W

Ensures reliable performance by handling up to 0.5 watts of power dissipation safely.

Package Shape: RECTANGULAR

Facilitates efficient placement and handling during assembly due to its easy-to-work-with shape.

No. of Elements: 2

Allows for multiple functions or connections in a single component, reducing the need for additional parts.

No. of Terminals: 6

Provides flexibility in circuit connections and ensures compatibility with various PCB designs.

Minimum DC Current Gain (hFE): 80

Ensures consistent and reliable amplification of signals, making it suitable for a wide range of applications.

Maximum Collector-Emitter Voltage: 50 V

Supports a wide range of voltage requirements, increasing the versatility of the transistor.

Transistor Element Material: SILICON

Offers stable and predictable performance characteristics, making it a reliable choice for electronic circuits.

Maximum Collector Current (IC): 0.1 A

Capable of handling up to 0.1 ampere of collector current, suitable for low to medium power applications.

Terminal Finish: TIN

Provides good conductivity and solderability, ensuring secure connections during assembly.

Terminal Position: DUAL

Offers multiple terminal positions for versatile circuit connections and configurations.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures reliable soldering performance within a specified time frame, maintaining the integrity of the connections.

Peak Reflow Temperature °C: 260

Withstands high reflow temperatures during assembly processes, ensuring the longevity of the component.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBA123JDXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 0.047

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

NSBA123JDXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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