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NSBA123JDXV6T5G

Onsemi

NSBA123JDXV6T5G by Onsemi

NSBA123JDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 80. It has max voltage of 50V, current of 0.1A, and power dissipation of 0.5W. Ideal for applications requiring small outline package style in temp up to 150 °C like signal amplification circuits.

Median Price

$0.060

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 40,000 parts In-Stock

1+ parts

-

100+ parts

$0.062

1k+ parts

$0.051

10k+ parts

$0.046

40,000

-

$0.062

$0.051

$0.046

Verical

USA . 40,000 parts In-Stock

1+ parts

-

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10k+ parts

$0.058

40,000

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$0.058

Distributors (In-Stock)

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Digiode

USA . 2,025 parts In-Stock

1+ parts

$0.050

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2,025

$0.050

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Chip Stock

USA . 60,000 parts In-Stock

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60,000

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Flip Electronics

USA . 40,000 parts In-Stock

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Vyrian

USA . 12,056 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 542 parts In-Stock

1+ parts

$0.048

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542

$0.048

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Corohmni

South Africa . 150 parts In-Stock

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$0.053

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150

$0.053

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AZTECH Wire

Italy . 809 parts In-Stock

1+ parts

$16.670

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809

$16.670

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Kepictronics

USA . 40,000 parts In-Stock

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Problanco Electronics

Mexico . 5,414 parts In-Stock

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SupplyDigital Components

Austria . 4,856 parts In-Stock

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TANS Electronics

Latvia . 2,832 parts In-Stock

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2,832

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 765 parts In-Stock

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Kulean Microsystems

USA . 120 parts In-Stock

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Overview

Unlock the power of innovation with the NSBA123JDXV6T5G by Onsemi, a top-quality PNP Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this component boasts a compact rectangular package with dual terminals, delivering superior performance and reliability. Ideal for a variety of applications, this transistor offers customers the advantage of high DC current gain, low power dissipation, and a wide operating temperature range. Experience seamless integration and enhanced functionality with the NSBA123JDXV6T5G, setting new standards in electronic design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification and switching applications, offering versatility.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB.

Surface Mount: YES

Allows for easy and efficient installation on a PCB, enhancing the assembly process.

Maximum Power Dissipation (Abs): 0.5 W

Can handle moderate power levels, suitable for small signal applications.

Package Shape: RECTANGULAR

Fits well in compact electronic devices, optimizing space usage.

Minimum DC Current Gain (hFE): 80

Provides reliable amplification of signals with a minimum gain of 80.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for various environments.

Maximum Collector-Emitter Voltage: 50 V

Can handle up to 50 volts, making it suitable for low to moderate voltage applications.

Maximum Collector Current (IC): 0.1 A

Can carry currents up to 0.1 ampere, suitable for low current applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBA123JDXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 0.047

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

NSBA123JDXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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