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NSBA143ZDXV6T5G

Onsemi

NSBA143ZDXV6T5G by Onsemi

NSBA143ZDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, and hFE of 80. It has a max VCE of 50V and IC of 0.1A, suitable for small outline applications requiring low collector current in electronic circuits. The transistor's flat terminals and plastic/epoxy package make it ideal for surface mount designs in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,239 parts In-Stock

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Digiode

USA . 1,147 parts In-Stock

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AZTECH Wire

Italy . 137 parts In-Stock

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$17.230

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137

$17.230

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QUARKTWIN TECHNOLOGY LTD

USA . 28,367 parts In-Stock

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SupplyDigital Components

Austria . 8,084 parts In-Stock

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Problanco Electronics

Mexico . 4,953 parts In-Stock

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4,953

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Kulean Microsystems

USA . 4,388 parts In-Stock

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TANS Electronics

Latvia . 3,738 parts In-Stock

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Corphita

USA . 2,222 parts In-Stock

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UHIMA Technologies

Türkiye . 835 parts In-Stock

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Corohmni

South Africa . 146 parts In-Stock

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Overview

Elevate your electronic designs with the NSBA143ZDXV6T5G by Onsemi, a high-quality PNP small signal bipolar junction transistor with built-in resistor elements. Onsemi is known for its superior manufacturing standards, ensuring reliable performance and durability. Ideal for a wide range of applications, this transistor offers unmatched value and benefits to customers looking for precision and efficiency in their circuit designs. Upgrade your projects today with the NSBA143ZDXV6T5G and experience the advantages of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification and switching circuits, offering versatility in design.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

This configuration allows for more flexibility in circuit design and the built-in resistor simplifies the overall design.

Surface Mount: YES

Surface mount capability enables easy and efficient assembly onto circuit boards, saving time and space.

Package Shape: RECTANGULAR

Rectangular shape makes it compatible with standard PCB layouts, ensuring easy integration into existing designs.

No. of Elements: 2

Having two elements provides added functionality and enables more complex circuit designs.

No. of Terminals: 6

The six terminals allow for greater connectivity options, increasing the versatility of the transistor.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and is suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 80

High DC current gain ensures efficient and reliable amplification of signals.

Maximum Collector-Emitter Voltage: 50 V

A high collector-emitter voltage rating allows for handling of higher voltages, increasing the range of applications.

Transistor Element Material: SILICON

Silicon material offers high efficiency and reliability in electronic circuits, making it a popular choice for transistors.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current loads in various circuit applications.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and solderability, ensuring reliable connections.

Terminal Position: DUAL

Dual terminal position allows for easier and more secure PCB mounting, enhancing the overall reliability of the transistor.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBA143ZDXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 0.1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

NSBA143ZDXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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