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BSP62H6327XTSA1

Infineon Technologies

BSP62H6327XTSA1 by Infineon Technologies

BSP62H6327XTSA1 by Infineon is a PNP BJT with Darlington configuration, built-in diode, and resistor. It has a hFE of 2000, Vce of 80V, and fT of 200MHz. Ideal for switching applications, this transistor offers fast turn-on/off times and can handle up to 1A collector current in a surface-mount package.

Median Price

$0.194

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 36,000 parts In-Stock

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-

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$0.166

10k+ parts

$0.148

36,000

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$0.166

$0.148

EBV Elektronik

Germany . 7,000 parts In-Stock

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7,000

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Arrow

USA . 1,000 parts In-Stock

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$0.194

10k+ parts

$0.157

1,000

-

-

$0.194

$0.157

Verical

USA . 1,000 parts In-Stock

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$0.194

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$0.157

1,000

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$0.194

$0.157

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 750 parts In-Stock

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$0.364

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750

$0.364

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Chip Stock

USA . 156,900 parts In-Stock

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156,900

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Schukat

Germany . 5,900 parts In-Stock

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$0.232

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$0.160

10k+ parts

$0.154

5,900

-

$0.232

$0.160

$0.154

NAC Semi

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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$0.518

10k+ parts

$0.478

3,000

-

-

$0.518

$0.478

Vyrian

USA . 2,055 parts In-Stock

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2,055

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Rutronik

Germany . 2,000 parts In-Stock

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$0.191

10k+ parts

$0.169

2,000

-

-

$0.191

$0.169

Partservice

France . 1,000 parts In-Stock

1+ parts

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100+ parts

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$0.165

10k+ parts

$0.165

1,000

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$0.165

$0.165

Micros sp.j. W. Kędra i J. Lic

Poland . 1,000 parts In-Stock

1+ parts

-

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$0.177

10k+ parts

$0.177

1,000

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$0.177

$0.177

Digiode

USA . 882 parts In-Stock

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VNN

France . 40 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 14,195 parts In-Stock

1+ parts

$0.120

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14,195

$0.120

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Semicontronic

India . 14,116 parts In-Stock

1+ parts

$0.120

100+ parts

$0.117

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$0.116

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14,116

$0.120

$0.117

$0.116

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Modulus Dynamics

Lithuania . 15,003 parts In-Stock

1+ parts

$0.250

100+ parts

$0.240

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$0.230

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-

15,003

$0.250

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$0.230

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Corohmni

South Africa . 116 parts In-Stock

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$0.250

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116

$0.250

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Continental Prestige Electronics

USA . 6,723 parts In-Stock

1+ parts

$0.282

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$0.277

6,723

$0.282

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$0.277

Argo Parts USA

USA . 2,320 parts In-Stock

1+ parts

$0.282

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$0.274

2,320

$0.282

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$0.274

Aztec Data Supply Inc.

USA . 350 parts In-Stock

1+ parts

$1.370

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350

$1.370

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AZTECH Wire

Italy . 1,194 parts In-Stock

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$22.220

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$22.220

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Corphita

USA . 685 parts In-Stock

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685

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

1+ parts

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100+ parts

$0.357

1k+ parts

$0.346

10k+ parts

$0.339

100

-

$0.357

$0.346

$0.339

Overview

Looking for a reliable solution for your switching applications? Look no further than the BSP62H6327XTSA1 by Infineon Technologies. With its high-quality construction and innovative design, this PNP Darlington transistor offers unparalleled performance and reliability. Whether you're working on industrial automation, motor control, or power management systems, this transistor provides the efficiency and precision you need. Trust in Infineon's expertise and choose the BSP62H6327XTSA1 for all your small signal BJT needs. Unlock the potential of your projects with this versatile and dependable component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package lightweight and durable, ideal for portable or rugged applications.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into circuits where PNP transistors are required.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration provides high current gain and the built-in diode and resistor offer added functionality and convenience in circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Package Shape: RECTANGULAR

Rectangular shape enables space-saving placement on the PCB.

No. of Terminals: 4

4 terminals provide flexibility in circuit connection and integration.

Minimum DC Current Gain (hFE): 2000

High minimum DC current gain ensures reliable and consistent performance in amplification applications.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating allows for voltage handling capability in various circuit configurations.

Transistor Element Material: SILICON

Silicon material ensures high performance and efficiency in signal amplification.

Maximum Turn On Time (ton): 400 ns

Fast turn-on time ensures quick response in switching operations.

Maximum Collector Current (IC): 1 A

High collector current rating supports applications requiring higher current handling capabilities.

Maximum Turn Off Time (toff): 1500 ns

A moderate turn-off time allows for controlled switching operations.

Terminal Finish: TIN

Tin finish offers good conductivity and solderability for reliable connections.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit layout and connection.

Case Connection: COLLECTOR

Collector case connection simplifies circuit design and layout.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for high-speed signal processing and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BSP62H6327XTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

2000

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

1500 ns

Maximum Turn On Time (ton):

400 ns

Trade Compliance

BSP62H6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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