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BSP62

NXP Semiconductors

BSP62 by NXP Semiconductors

NXP Semiconductors' BSP62 is a PNP BJT with Darlington configuration, built-in diode, and resistor. Ideal for switching applications, it has VCEsat of 1.3V, hFE of 2000, and can handle up to 1A collector current. With a max operating temperature of 150°C and peak reflow temp of 260°C, it offers high performance in a small outline package.

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Goldney Electronics S.L.

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J2 Sourcing AB

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Nova Conductors

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PC Components Company LLC

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Aztec Data Supply Inc.

USA . 2,789 parts In-Stock

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Corohmni

South Africa . 493 parts In-Stock

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Modulus Dynamics

Lithuania . 14,454 parts In-Stock

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AZTECH Wire

Italy . 9,858 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the BSP62 by NXP Semiconductors. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor offers exceptional performance in a wide range of switching applications. With a built-in diode and resistor, the BSP62 guarantees seamless operation and efficiency. Experience unrivaled quality and reliability while maximizing your project's potential. Elevate your creations with the BSP62 and embrace unparalleled value and innovation like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and allows for easier handling during assembly.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Offers enhanced performance and functionality in switching applications.

Transistor Application: SWITCHING

Ideal for applications where rapid switching is required.

Surface Mount: YES

Facilitates easy and efficient PCB assembly.

Maximum VCEsat: 1.3 V

Low voltage drop helps in reducing power dissipation and improving efficiency.

Package Shape: RECTANGULAR

Allows for compact and efficient PCB layout.

Terminal Form: GULL WING

Enables easy soldering and reliable connection.

No. of Terminals: 4

Provides necessary connectivity for the transistor operation.

Maximum Power Dissipation (Abs): 1.5 W

Ensures the transistor can handle high power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Saves space on the PCB and allows for higher component density.

Maximum Power Dissipation Ambient: 1.5 W

Can dissipate heat effectively in various operating environments.

Minimum DC Current Gain (hFE): 2000

Ensures high gain and amplification capabilities.

Maximum Operating Temperature: 150 °C

Suitable for operation in high-temperature environments.

Maximum Collector-Emitter Voltage: 80 V

Allows for handling of high voltage levels.

Transistor Element Material: SILICON

Provides reliability and durability.

Maximum Collector Current (IC): 1 A

Capable of handling high current levels.

Terminal Finish: Tin (Sn)

Ensures a reliable electrical connection.

Terminal Position: DUAL

Offers flexibility in PCB layout and design.

Case Connection: COLLECTOR

Facilitates connection to the collector terminal.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering during assembly.

Peak Reflow Temperature °C: 260

Allows for efficient and reliable soldering process.

Nominal Transition Frequency (fT): 200 MHz

Indicates high-speed performance for signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BSP62 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

2000

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.3 V

Trade Compliance

BSP62 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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