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BSP60,115

NXP Semiconductors

BSP60,115 by NXP Semiconductors

NXP Semiconductors' BSP60,115 is a PNP BJT with Darlington configuration for switching applications. Features include VCEsat of 1.3V, hFE of 2000, and IC of 1A. With a max operating temperature of 150°C, it's ideal for high-power switching in compact designs.

Median Price

$0.380

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,835 parts In-Stock

1+ parts

$0.830

100+ parts

$0.336

1k+ parts

$0.231

10k+ parts

$0.161

2,835

$0.830

$0.336

$0.231

$0.161

DigiKey

USA . 120 parts In-Stock

1+ parts

$0.830

100+ parts

$0.335

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120

$0.830

$0.335

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Rochester

USA . 117,323 parts In-Stock

1+ parts

-

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$0.412

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$0.342

10k+ parts

$0.305

117,323

-

$0.412

$0.342

$0.305

Verical

USA . 105,000 parts In-Stock

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-

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$0.427

10k+ parts

$0.381

105,000

-

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$0.427

$0.381

EBV Elektronik

Germany . 3,000 parts In-Stock

1+ parts

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3,000

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Chip1Stop

Japan . 3,000 parts In-Stock

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$0.170

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3,000

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$0.170

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Farnell

UK . 2,150 parts In-Stock

1+ parts

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$0.277

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$0.175

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$0.175

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Arrow

USA . 1,740 parts In-Stock

1+ parts

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$0.332

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1,740

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$0.332

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Element14

Singapore . 1,030 parts In-Stock

1+ parts

-

100+ parts

$0.348

1k+ parts

$0.187

10k+ parts

$0.183

1,030

-

$0.348

$0.187

$0.183

Distributors (In-Stock)

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Flip Electronics

USA . 2,000 parts In-Stock

1+ parts

$0.033

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-

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2,000

$0.033

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Digiode

USA . 2,053 parts In-Stock

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$0.148

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Chip Stock

USA . 74,000 parts In-Stock

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Vyrian

USA . 3,401 parts In-Stock

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Anansix

USA . 1,915 parts In-Stock

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Cyclops Electronics Ltd

UK . 1,000 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,635 parts In-Stock

1+ parts

$0.140

100+ parts

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1,635

$0.140

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Component Stockers USA

USA . 13,432 parts In-Stock

1+ parts

$0.160

100+ parts

$0.150

1k+ parts

$0.130

10k+ parts

$0.170

13,432

$0.160

$0.150

$0.130

$0.170

AZTECH Wire

Italy . 4,994 parts In-Stock

1+ parts

$0.280

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4,994

$0.280

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Continental Prestige Electronics

USA . 637 parts In-Stock

1+ parts

$0.630

100+ parts

$0.340

1k+ parts

$0.192

10k+ parts

$0.169

637

$0.630

$0.340

$0.192

$0.169

Native Components

USA . 1,211 parts In-Stock

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$1.348

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Northwest PG Solutions

USA . 3,546 parts In-Stock

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$1.483

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Perfect Parts

USA . 57,120 parts In-Stock

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iodParts Technologies Inc.

India . 13,768 parts In-Stock

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Kepictronics

USA . 10,820 parts In-Stock

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Lixinc

USA . 7,613 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,867 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,763 parts In-Stock

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Microchip USA

USA . 6,122 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,578 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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GreenTree Electronics

Israel . 4,000 parts In-Stock

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UNI Independent Distributors

Spain . 3,706 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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$0.198

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Supply Digital

USA . 126 parts In-Stock

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126

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Overview

Unlock the power of innovation with the NXP Semiconductors BSP60,115 Small Signal Bipolar Junction Transistor. Designed for high-performance switching applications, this PNP transistor offers unparalleled quality and reliability. With a Darlington configuration, built-in diode, and resistor, this transistor provides seamless operation. Whether you're working on industrial automation or consumer electronics, the BSP60,115 delivers exceptional value and performance. Trust NXP Semiconductors for cutting-edge technology that fuels your success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: PNP

PNP polarity allows for easy integration into circuits that require PNP transistors.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration along with built-in diode and resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed for switching applications, making it suitable for tasks that require fast switching speeds.

Surface Mount: YES

Surface mount capability enables easy and convenient placement on the PCB during assembly.

Maximum VCEsat: 1.3 V

Low VCEsat reduces power dissipation and improves efficiency in switching applications.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient use of space on the PCB.

No. of Terminals: 4

4 terminals provide necessary connections for the transistor in the circuit.

Maximum Power Dissipation (Abs): 1.5 W

With a maximum power dissipation of 1.5 W, the transistor can handle higher power levels without overheating.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BSP60,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

45 V

Minimum DC Current Gain (hFE):

2000

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.3 V

Trade Compliance

BSP60,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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