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BSP62T1

Onsemi

BSP62T1 by Onsemi

BSP62T1 by Onsemi is a PNP BJT with Darlington configuration for switching applications. Features include hFE of 2000, IC max of 0.5A, and Gull Wing terminals in a small outline package. Ideal for compact electronic designs requiring high current gain and collector current capacity.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 793 parts In-Stock

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Digiode

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Problanco Electronics

Mexico . 6,243 parts In-Stock

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TANS Electronics

Latvia . 5,305 parts In-Stock

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SupplyDigital Components

Austria . 3,983 parts In-Stock

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Kulean Microsystems

USA . 3,948 parts In-Stock

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Northwest PG Solutions

USA . 2,017 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Corphita

USA . 874 parts In-Stock

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Native Components

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UHIMA Technologies

Türkiye . 454 parts In-Stock

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Corohmni

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Overview

Enhance your electronic projects with the BSP62T1 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, a trusted industry leader, this PNP Darlington transistor is perfect for switching applications. Its compact design and surface mount capability make it ideal for a wide range of projects. With a minimum DC current gain of 2000 and a maximum collector current of 0.5A, the BSP62T1 offers superior performance and reliability. Upgrade your designs today with this versatile component from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits where PNP transistors are required.

Configuration: DARLINGTON

The Darlington configuration offers high current gain and is ideal for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Surface Mount: YES

The surface mount capability enables easy and convenient installation on circuit boards.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space on the circuit board.

Terminal Form: GULL WING

The gull wing terminals facilitate easy soldering and ensure secure connections.

No. of Terminals: 4

Having 4 terminals provides sufficient connectivity options for various circuit setups.

Package Style (Meter): SMALL OUTLINE

The small outline package style ensures the transistor can fit in compact electronic devices.

Minimum DC Current Gain (hFE): 2000

The high minimum DC current gain ensures efficient amplification and switching capabilities.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistors, offering stable and consistent performance.

Maximum Collector Current (IC): 0.5 A

The maximum collector current of 0.5 A allows for handling moderate power loads in circuits.

Terminal Finish: TIN LEAD

The tin lead finish on the terminals provides good conductivity and corrosion resistance.

Terminal Position: DUAL

Having dual terminal positions allows for flexibility in circuit connection options.

Case Connection: COLLECTOR

The collector case connection simplifies circuit design and enhances efficiency.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BSP62T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

2000

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSP62T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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