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BSP62,115

NXP Semiconductors

BSP62,115 by NXP Semiconductors

NXP Semiconductors' BSP62,115 is a PNP BJT with Darlington configuration for switching applications. It has VCEsat of 1.3V, hFE of 2000, and can handle IC up to 1A. With a max operating temperature of 150°C and fT of 200MHz, it's ideal for high-power switching in compact designs.

Median Price

$1.070

Lifecycle Status

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20

In-Stock Inventory

1k+

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Chip1Stop

Japan . 702 parts In-Stock

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Mouser Electronics

USA . 123 parts In-Stock

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$0.440

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$0.325

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Farnell

UK . 1,855 parts In-Stock

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$4.620

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$2.300

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$1.870

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Rochester

USA . 17,700 parts In-Stock

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Verical

USA . 16,700 parts In-Stock

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Arrow

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EBV Elektronik

Germany . 3,000 parts In-Stock

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RS (Exports)

UK . 360 parts In-Stock

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$2.001

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$1.807

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Digiode

USA . 1,731 parts In-Stock

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$0.148

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Nova Conductors

Japan . 63 parts In-Stock

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Chip Stock

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Vyrian

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NAC Semi

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Anansix

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Partservice

France . 1,000 parts In-Stock

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IBS Electronics

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$1.150

Micros sp.j. W. Kędra i J. Lic

Poland . 1,000 parts In-Stock

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Bristol Electronics

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VNN

France . 615 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 443 parts In-Stock

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Ampacity Inc.

Singapore . 6,511 parts In-Stock

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$0.122

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Corphita

USA . 4,309 parts In-Stock

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Argo Parts USA

USA . 4,102 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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AZTECH Wire

Italy . 5,938 parts In-Stock

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Continental Prestige Electronics

USA . 1,063 parts In-Stock

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Corohmni

South Africa . 236 parts In-Stock

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Andel Nordic

Denmark . 5,900 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,784 parts In-Stock

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Component Connect

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UNI Independent Distributors

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Authorized Procurement Solutions

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Eastek

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Supply Digital

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Overview

Upgrade your electronics with the NXP Semiconductors BSP62,115 Small Signal Bipolar Junction Transistor. Manufactured by industry leaders, this PNP transistor offers unmatched quality and reliability. Ideal for switching applications, this transistor provides a seamless performance with its built-in diode and resistor configuration. With a high DC current gain of 2000 and maximum collector-emitter voltage of 80V, this transistor ensures optimal functionality. Say goodbye to subpar performance and elevate your projects with the BSP62,115 for superior results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and long-lasting.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuits that require PNP transistors.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and save space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Maximum VCEsat: 1.3 V

Low VCEsat voltage helps in reducing power losses and improving efficiency.

Maximum Power Dissipation (Abs): 1.5 W

With a high power dissipation rating, the transistor can handle large amounts of power without overheating.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating allows for use in a wide range of applications.

Maximum Collector Current (IC): 1 A

Capable of handling high collector currents, making it suitable for various load requirements.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency enables fast switching speeds, crucial for efficient switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BSP62,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

2000

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.3 V

Trade Compliance

BSP62,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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