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MCH5541-TL-E

Onsemi

MCH5541-TL-E by Onsemi

MCH5541-TL-E by Onsemi is a Small Signal BJT with NPN and PNP channels. It features 0.5W power dissipation, 200 min hFE, and 0.7A max collector current. Ideal for applications requiring surface mount technology in environments up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 67,000 parts In-Stock

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Vyrian

USA . 7,909 parts In-Stock

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Digiode

USA . 487 parts In-Stock

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487

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Distributors (Availability)

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AZTECH Wire

Italy . 158 parts In-Stock

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$11.580

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158

$11.580

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Component Stockers USA

USA . 536 parts In-Stock

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$99.990

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536

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TANS Electronics

Latvia . 7,945 parts In-Stock

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SupplyDigital Components

Austria . 4,799 parts In-Stock

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4,799

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Problanco Electronics

Mexico . 1,545 parts In-Stock

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Kulean Microsystems

USA . 1,488 parts In-Stock

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Corphita

USA . 1,082 parts In-Stock

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Corohmni

South Africa . 417 parts In-Stock

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UHIMA Technologies

Türkiye . 172 parts In-Stock

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Overview

Unleash the power of innovation with the MCH5541-TL-E by Onsemi, a top-tier manufacturer known for delivering quality and reliability. This small signal bipolar junction transistor (BJT) offers versatile applications and superior performance, making it an essential component for your projects. With NPN and PNP polarity options, surface mount capability, and a high DC current gain of 200, this product provides exceptional value and efficiency. Trust Onsemi to deliver cutting-edge technology that exceeds expectations and propels your creations to new heights.

Feature Benefit Bullets

Polarity or Channel Type: NPN AND PNP

Offers versatility in circuit design as both NPN and PNP transistor types are available in the same product.

Surface Mount: YES

Allows for easy and convenient mounting on circuit boards, saving space and facilitating automated assembly processes.

Maximum Power Dissipation (Abs): 0.5 W

Can handle moderate power levels, suitable for a wide range of low to medium power applications.

Minimum DC Current Gain (hFE): 200

Provides high current gain, ensuring efficient amplification and signal processing in various electronic circuits.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, ideal for applications that require stable performance under heat stress.

Maximum Collector Current (IC): 0.7 A

Supports moderate collector currents, suitable for designs requiring higher current handling capabilities.

Terminal Finish: Tin/Bismuth (Sn/Bi)

Offers a reliable and durable terminal finish, ensuring good solderability and long-term stability in electronic assemblies.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MCH5541-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

200

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Trade Compliance

MCH5541-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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