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MCH5541

Onsemi

MCH5541 by Onsemi

The Onsemi MCH5541 is a Small Signal BJT available in NPN and PNP types. With a max power dissipation of 0.5W, it offers a min hFE of 200 and max IC of 0.7A. Ideal for applications requiring high DC current gain and low power dissipation in surface mount designs up to 150 °C.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,390 parts In-Stock

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2,390

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Vyrian

USA . 1,465 parts In-Stock

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1,465

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 6,905 parts In-Stock

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6,905

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TANS Electronics

Latvia . 6,804 parts In-Stock

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6,804

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Kulean Microsystems

USA . 5,579 parts In-Stock

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5,579

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Problanco Electronics

Mexico . 1,780 parts In-Stock

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1,780

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Corphita

USA . 1,549 parts In-Stock

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1,549

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Corohmni

South Africa . 259 parts In-Stock

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259

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UHIMA Technologies

Türkiye . 26 parts In-Stock

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Overview

Enhance your electronic designs with the MCH5541 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) that offers both NPN and PNP polarity options. With a maximum power dissipation of 0.5W and a minimum DC current gain of 200, this versatile component is perfect for a variety of applications. From amplifiers to switching circuits, the MCH5541 delivers reliable performance and efficiency. Trust Onsemi's reputation for excellence and invest in a product that provides exceptional value and benefits for your projects.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits which makes this product suitable for various electronic applications.

Polarity or Channel Type: PNP

PNP transistors are often used in high-side switching circuits, complementing the NPN transistors to provide versatility in circuit design.

Surface Mount: YES

The surface mount capability allows for easy and efficient PCB assembly, saving space and reducing overall manufacturing costs.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power levels, making it suitable for low to medium power applications.

Minimum DC Current Gain (hFE): 200

A minimum DC current gain of 200 ensures high amplification capabilities, making this transistor ideal for signal amplification in electronic circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows for reliable performance in a wide range of environmental conditions, ensuring stability and longevity of the product.

Maximum Collector Current (IC): 0.7 A

With a maximum collector current of 0.7A, this transistor can handle moderate current levels, making it suitable for various switching and amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MCH5541 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

200

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Trade Compliance

MCH5541 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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