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NSVEMT1DXV6T5G

Onsemi

NSVEMT1DXV6T5G by Onsemi

NSVEMT1DXV6T5G by Onsemi is a PNP BJT with 2 elements, ideal for amplifier applications. It features VCEsat of 0.5V, hFE of 120, and max IC of 0.1A. With a max operating temp of 150 °C and AEC-Q101 standard compliance, it offers high performance in small outline packages.

Median Price

$0.079

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 7,700 parts In-Stock

1+ parts

-

100+ parts

$0.082

1k+ parts

$0.068

10k+ parts

$0.061

7,700

-

$0.082

$0.068

$0.061

Verical

USA . 7,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.076

7,700

-

-

-

$0.076

Distributors (In-Stock)

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Chip Stock

USA . 35,000 parts In-Stock

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35,000

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Vyrian

USA . 4,174 parts In-Stock

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4,174

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Digiode

USA . 499 parts In-Stock

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499

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Distributors (Availability)

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AZTECH Wire

Italy . 566 parts In-Stock

1+ parts

$10.770

100+ parts

-

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-

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-

566

$10.770

-

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Component Stockers USA

USA . 612 parts In-Stock

1+ parts

$99.990

100+ parts

-

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612

$99.990

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

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10,000

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Kepictronics

USA . 6,000 parts In-Stock

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6,000

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SupplyDigital Components

Austria . 4,756 parts In-Stock

1+ parts

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4,756

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TANS Electronics

Latvia . 2,478 parts In-Stock

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2,478

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UHIMA Technologies

Türkiye . 888 parts In-Stock

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888

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Kulean Microsystems

USA . 497 parts In-Stock

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497

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Problanco Electronics

Mexico . 431 parts In-Stock

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431

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Corohmni

South Africa . 258 parts In-Stock

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258

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Corphita

USA . 209 parts In-Stock

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209

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Overview

Unleash the power of superior performance with the NSVEMT1DXV6T5G by Onsemi! Crafted with precision and excellence, this Small Signal Bipolar Junction Transistor (BJT) is designed to amplify like never before. With a maximum VCEsat of 0.5V and a minimum DC current gain of 120, this PNP transistor is perfect for applications requiring high performance and reliability. Whether you're looking to boost your amplifier or enhance your circuit, the NSVEMT1DXV6T5G delivers unparalleled value, benefits, and advantages that will take your projects to the next level. Elevate your electronics game today with Onsemi's top-of-the-line transistor!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to environmental factors, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for various amplifier applications.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements allows for more flexibility in circuit design and can improve overall performance.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in this type of circuit.

Surface Mount: YES

Facilitates easy installation on circuit boards, making it suitable for compact designs and mass production.

Maximum VCEsat: 0.5 V

Low VCEsat results in reduced power dissipation and improved efficiency in amplifier circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on circuit boards and easy integration into existing systems.

No. of Elements: 2

Having 2 elements provides more functionality and versatility in circuit design.

Maximum Power Dissipation (Abs): 0.5 W

Ensures that the transistor can handle high power levels without overheating or damage.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on circuit boards and allows for compact designs.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures that the transistor can amplify weak signals effectively in amplifier circuits.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

Allows for higher voltage handling capabilities in amplifier circuits, improving overall reliability.

Transistor Element Material: SILICON

Silicon material offers good electrical properties and reliability, making it a preferred choice for transistors.

Minimum Operating Temperature: -55 °C

Suitable for operation in low-temperature environments without compromising performance.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels in amplifier circuits, ensuring reliable operation.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and corrosion resistance for long-term performance.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit board layout and easy connection to other components.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a short duration, making it suitable for reflow soldering processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and durability of connections during assembly.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standards ensures high reliability and quality for automotive applications.

Nominal Transition Frequency (fT): 140 MHz

High transition frequency allows for fast switching speeds and improved performance in amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVEMT1DXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

NSVEMT1DXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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