Loading...

NSVEMD4DXV6T5G

Onsemi

NSVEMD4DXV6T5G by Onsemi

NSVEMD4DXV6T5G by Onsemi is a dual NPN and PNP BJT with 2 elements, 0.1A max collector current, and 0.5W max power dissipation. Ideal for small signal applications requiring high DC current gain (hFE > 80) in surface mount technology.

Median Price

$0.094

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics (Authorized)

USA . 179,980 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

179,980

-

-

-

-

Farnell

UK . 104,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.091

104,000

-

-

-

$0.091

Chip1Stop

Japan . 88,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.084

88,000

-

-

-

$0.084

Arrow

USA . 32,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.097

32,000

-

-

-

$0.097

Verical

USA . 12,196 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.109

12,196

-

-

-

$0.109

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 518 parts In-Stock

1+ parts

$0.091

100+ parts

-

1k+ parts

-

10k+ parts

-

518

$0.091

-

-

-

Nova Conductors

Japan . 20 parts In-Stock

1+ parts

$0.109

100+ parts

-

1k+ parts

-

10k+ parts

-

20

$0.109

-

-

-

Vyrian

USA . 91,982 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

91,982

-

-

-

-

Chip Stock

USA . 29,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

29,000

-

-

-

-

Flip Electronics

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 91,955 parts In-Stock

1+ parts

$0.071

100+ parts

-

1k+ parts

-

10k+ parts

-

91,955

$0.071

-

-

-

Corohmni

South Africa . 400 parts In-Stock

1+ parts

$0.084

100+ parts

-

1k+ parts

-

10k+ parts

-

400

$0.084

-

-

-

Corphita

USA . 2,109 parts In-Stock

1+ parts

$0.086

100+ parts

-

1k+ parts

-

10k+ parts

-

2,109

$0.086

-

-

-

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.109

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$0.109

-

-

-

Continental Prestige Electronics

USA . 96,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.091

10k+ parts

-

96,000

-

-

$0.091

-

Kepictronics

USA . 46,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

46,000

-

-

-

-

Authorized Procurement Solutions

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,000

-

-

-

-

TANS Electronics

Latvia . 4,673 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,673

-

-

-

-

Kulean Microsystems

USA . 4,534 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,534

-

-

-

-

SupplyDigital Components

Austria . 3,207 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,207

-

-

-

-

Problanco Electronics

Mexico . 1,081 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,081

-

-

-

-

UHIMA Technologies

Türkiye . 495 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

495

-

-

-

-

Overview

Discover the power of Onsemi's NSVEMD4DXV6T5G Small Signal Bipolar Junction Transistors (BJT) - the ultimate solution for your circuit design needs. With NPN and PNP polarity options, this surface-mount transistor offers versatility and efficiency in a compact package. Whether you're working on amplifiers, oscillators, or voltage regulators, this transistor delivers reliable performance with a maximum power dissipation of 0.5W. Trust in Onsemi's reputation for quality and innovation, and take your projects to the next level with the NSVEMD4DXV6T5G.

Feature Benefit Bullets

Polarity or Channel Type: NPN AND PNP

Versatile and compatible with different circuit designs.

Surface Mount: YES

Ease of installation and space-saving in compact designs.

No. of Elements: 2

Allows for multiple functions in a single component.

Maximum Power Dissipation (Abs): 0.5 W

Can handle moderate power requirements efficiently.

Minimum DC Current Gain (hFE): 80

Provides consistent and reliable amplification.

Transistor Element Material: SILICON

Offers good performance and durability.

Maximum Collector Current (IC): 0.1 A

Suitable for low to medium current applications.

Terminal Finish: MATTE TIN

Enhances solderability and conductivity.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures safe and reliable reflow soldering.

Peak Reflow Temperature °C: 260

Ability to withstand high-temperature soldering processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVEMD4DXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

80

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

NSVEMD4DXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 4