Loading...

NSVEMT1DXV6T1G

Onsemi

NSVEMT1DXV6T1G by Onsemi

NSVEMT1DXV6T1G by Onsemi is a PNP BJT with 2 elements, ideal for amplifier applications. Features include VCEsat of 0.5V, hFE of 120, and max operating temp of 150°C. With a max collector-emitter voltage of 50V and small outline package style, it offers high performance in compact designs.

Median Price

$0.266

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,970 parts In-Stock

1+ parts

$0.450

100+ parts

$0.175

1k+ parts

$0.116

10k+ parts

$0.104

3,970

$0.450

$0.175

$0.116

$0.104

Mouser Electronics

USA . 3,800 parts In-Stock

1+ parts

$0.450

100+ parts

$0.175

1k+ parts

$0.117

10k+ parts

$0.080

3,800

$0.450

$0.175

$0.117

$0.080

Rochester

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

$0.082

1k+ parts

$0.068

10k+ parts

$0.061

36,000

-

$0.082

$0.068

$0.061

Verical

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.076

36,000

-

-

-

$0.076

Future Electronics

Canada . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,543 parts In-Stock

1+ parts

$0.064

100+ parts

-

1k+ parts

-

10k+ parts

-

1,543

$0.064

-

-

-

Vyrian

USA . 1,121 parts In-Stock

1+ parts

$0.067

100+ parts

-

1k+ parts

-

10k+ parts

-

1,121

$0.067

-

-

-

Flip Electronics

USA . 52,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

52,000

-

-

-

-

NAC Semi

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.090

8,000

-

-

-

$0.090

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,958 parts In-Stock

1+ parts

$0.060

100+ parts

-

1k+ parts

-

10k+ parts

-

1,958

$0.060

-

-

-

Corohmni

South Africa . 457 parts In-Stock

1+ parts

$0.067

100+ parts

-

1k+ parts

-

10k+ parts

-

457

$0.067

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 13,242 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,242

-

-

-

-

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

Problanco Electronics

Mexico . 8,064 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,064

-

-

-

-

SupplyDigital Components

Austria . 6,116 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,116

-

-

-

-

TANS Electronics

Latvia . 4,433 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,433

-

-

-

-

Kulean Microsystems

USA . 702 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

702

-

-

-

-

UHIMA Technologies

Türkiye . 321 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

321

-

-

-

-

Overview

Discover the powerful performance of the NSVEMT1DXV6T1G by Onsemi, a top-tier manufacturer known for their commitment to quality and innovation. This Small Signal Bipolar Junction Transistor (BJT) is perfect for amplifier applications, boasting a maximum VCEsat of 0.5V and a minimum DC current gain (hFE) of 120. With surface mount capabilities and a maximum operating temperature of 150°C, this transistor offers unparalleled value and reliability. Upgrade your electronic projects with the NSVEMT1DXV6T1G and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and ruggedness, making it suitable for various applications.

Polarity or Channel Type: PNP

Suitable for amplification and switching applications.

Configuration: SEPARATE, 2 ELEMENTS

Allows for versatile circuit design and integration.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance.

Surface Mount: YES

Enables easy and efficient PCB assembly.

Maximum VCEsat: 0.5 V

Low saturation voltage contributes to energy efficiency.

Maximum Collector-Emitter Voltage: 50 V

Allows for handling of higher voltages in the circuit.

Minimum DC Current Gain (hFE): 120

Provides high gain, ensuring signal amplification with minimal distortion.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for various environments.

Maximum Power Dissipation (Abs): 0.5 W

Capable of dissipating power effectively to prevent overheating.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVEMT1DXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

NSVEMT1DXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 4