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NSVEMC2DXV5T1G

Onsemi

NSVEMC2DXV5T1G by Onsemi

NSVEMC2DXV5T1G by Onsemi is a dual NPN and PNP BJT with 0.5W power dissipation, hFE of 60, and IC of 0.1A. Ideal for surface mount applications in electronics requiring high current gain and low power consumption.

Median Price

$0.137

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 818 parts In-Stock

1+ parts

$0.077

100+ parts

-

1k+ parts

-

10k+ parts

-

818

$0.077

-

-

-

DigiKey

USA . 959 parts In-Stock

1+ parts

$0.580

100+ parts

$0.228

1k+ parts

$0.154

10k+ parts

$0.138

959

$0.580

$0.228

$0.154

$0.138

Mouser Electronics

USA . 405 parts In-Stock

1+ parts

$0.580

100+ parts

$0.229

1k+ parts

$0.142

10k+ parts

$0.108

405

$0.580

$0.229

$0.142

$0.108

Rochester

USA . 171,312 parts In-Stock

1+ parts

-

100+ parts

$0.118

1k+ parts

$0.098

10k+ parts

$0.087

171,312

-

$0.118

$0.098

$0.087

Verical

USA . 156,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.109

156,000

-

-

-

$0.109

Chip1Stop

Japan . 818 parts In-Stock

1+ parts

-

100+ parts

$0.156

1k+ parts

$0.134

10k+ parts

-

818

-

$0.156

$0.134

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,058 parts In-Stock

1+ parts

$0.087

100+ parts

-

1k+ parts

-

10k+ parts

-

1,058

$0.087

-

-

-

Digiode

USA . 1,728 parts In-Stock

1+ parts

$0.091

100+ parts

-

1k+ parts

-

10k+ parts

-

1,728

$0.091

-

-

-

Chip Stock

USA . 43,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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43,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 109,318 parts In-Stock

1+ parts

$0.060

100+ parts

$0.050

1k+ parts

$0.040

10k+ parts

$0.080

109,318

$0.060

$0.050

$0.040

$0.080

Corphita

USA . 1,713 parts In-Stock

1+ parts

$0.086

100+ parts

-

1k+ parts

-

10k+ parts

-

1,713

$0.086

-

-

-

Corohmni

South Africa . 419 parts In-Stock

1+ parts

$0.087

100+ parts

-

1k+ parts

-

10k+ parts

-

419

$0.087

-

-

-

Advanced Electronics

New Zealand . 300 parts In-Stock

1+ parts

$1.774

100+ parts

$1.757

1k+ parts

$1.686

10k+ parts

-

300

$1.774

$1.757

$1.686

-

Continental Prestige Electronics

USA . 171,312 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.116

10k+ parts

-

171,312

-

-

$0.116

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Problanco Electronics

Mexico . 4,651 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4,651

-

-

-

-

Kulean Microsystems

USA . 1,260 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,260

-

-

-

-

SupplyDigital Components

Austria . 1,082 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,082

-

-

-

-

TANS Electronics

Latvia . 384 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

384

-

-

-

-

UHIMA Technologies

Türkiye . 314 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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314

-

-

-

-

Overview

Unlock the potential of your electronic designs with the NSVEMC2DXV5T1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality Small Signal Bipolar Junction Transistors (BJT) that are versatile and reliable. With NPN and PNP polarity options, surface mount capabilities, and a maximum power dissipation of 0.5 W, this transistor is perfect for a wide range of applications. Trust in Onsemi's expertise and elevate your projects with the NSVEMC2DXV5T1G.

Feature Benefit Bullets

Polarity or Channel Type: NPN AND PNP

Provides flexibility in circuit design as the product can be used for both NPN and PNP applications.

Surface Mount: YES

Allows for easy PCB mounting, saving space and providing convenience during assembly.

No. of Elements: 2

Having 2 elements increases the functionality and versatility of the transistor in electronic circuits.

Maximum Power Dissipation (Abs): 0.5 W

With a high maximum power dissipation, this transistor can handle moderate power levels efficiently.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures stable and consistent amplification in various applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, reliability, and low noise characteristics.

Maximum Collector Current (IC): 0.1 A

Capable of handling currents up to 0.1 A, making it suitable for low to moderate current applications.

Terminal Finish: TIN

Tin terminal finish provides good solderability and ensures proper electrical connections.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for efficient soldering process with a maximum time of 30 seconds at peak reflow temperature.

Peak Reflow Temperature °C: 260

Can withstand high temperatures up to 260 °C during the soldering process, ensuring reliability.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVEMC2DXV5T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

60

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

NSVEMC2DXV5T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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