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NSVEMX1DXV6T1G

Onsemi

NSVEMX1DXV6T1G by Onsemi

NSVEMX1DXV6T1G by Onsemi is a NPN BJT transistor with 2 elements, ideal for amplifier applications. It features a max VCEsat of 0.4V, min hFE of 120, and max operating temp of 150 °C. This small outline package has 6 terminals and can handle a max collector current of 0.1A.

Median Price

$0.336

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,312 parts In-Stock

1+ parts

$0.560

100+ parts

$0.221

1k+ parts

$0.148

10k+ parts

$0.124

4,312

$0.560

$0.221

$0.148

$0.124

DigiKey

USA . 3,830 parts In-Stock

1+ parts

$0.560

100+ parts

$0.220

1k+ parts

$0.148

10k+ parts

$0.133

3,830

$0.560

$0.220

$0.148

$0.133

Rochester

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

$0.112

1k+ parts

$0.093

10k+ parts

$0.083

4,000

-

$0.112

$0.093

$0.083

Verical

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

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$0.104

4,000

-

-

-

$0.104

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,031 parts In-Stock

1+ parts

$0.087

100+ parts

-

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-

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2,031

$0.087

-

-

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Vyrian

USA . 516 parts In-Stock

1+ parts

$0.092

100+ parts

-

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-

516

$0.092

-

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Flip Electronics

USA . 60,000 parts In-Stock

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60,000

-

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,690 parts In-Stock

1+ parts

$0.083

100+ parts

-

1k+ parts

-

10k+ parts

-

1,690

$0.083

-

-

-

Corohmni

South Africa . 443 parts In-Stock

1+ parts

$0.092

100+ parts

-

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-

443

$0.092

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 9,238 parts In-Stock

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9,238

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Kulean Microsystems

USA . 7,448 parts In-Stock

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7,448

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TANS Electronics

Latvia . 7,428 parts In-Stock

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7,428

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Problanco Electronics

Mexico . 3,531 parts In-Stock

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3,531

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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SupplyDigital Components

Austria . 1,311 parts In-Stock

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1,311

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UHIMA Technologies

Türkiye . 651 parts In-Stock

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651

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Overview

Enhance your amplifier projects with the high-quality NSVEMX1DXV6T1G by Onsemi. As a leader in small signal bipolar junction transistors, Onsemi delivers reliable and efficient components for a wide range of applications. With its NPN polarity, separate configuration, and maximum VCEsat of 0.4V, this transistor offers exceptional performance. From its compact rectangular package to its impressive operating temperature range, the NSVEMX1DXV6T1G provides value and versatility to customers looking to amplify their designs. Choose Onsemi for superior quality and unmatched reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification, making this transistor suitable for amplifier applications.

Configuration: SEPARATE, 2 ELEMENTS

Having 2 separate elements allows for more flexibility in circuit design and can lead to improved performance.

Maximum VCEsat: 0.4 V

Low VCEsat minimizes power loss and improves efficiency in amplifier circuits.

Surface Mount: YES

Surface mount capability makes installation easier and can save space on the circuit board.

Maximum Power Dissipation (Abs): 0.5 W

With a high power dissipation capability, this transistor can handle higher power levels without overheating.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures reliable and consistent amplification performance.

Maximum Collector-Emitter Voltage: 50 V

Can handle higher voltage levels, increasing the range of applications for this transistor.

Minimum Operating Temperature: -55 °C

Wide operating temperature range allows for use in various environments.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current levels, suitable for many amplifier applications.

Nominal Transition Frequency (fT): 180 MHz

High transition frequency allows for high-speed switching and amplification, making this transistor ideal for fast applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVEMX1DXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

NSVEMX1DXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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